GaN low noise amplifier MMIC with LPF and HPF noise matching

Abstract

In this paper, we introduce two innovative two-stage low noise amplifiers (LNAs), each with distinct noise-matching networks. The first LNA features a low pass filter (LPF) for noise-matching in both stages, while the second uses a high pass filter (HPF) in a similar capacity. Our research focuses on evaluating the performance differences that arise from using varied matching networks within specific frequency ranges. Highlighting the critical role of appropriate network selection for optimizing gain and noise performance, our approach includes the development of two Monolithic Microwave Integrated Circuits (MMICs) using cutting-edge 0.25$\mu$m Gallium Nitride (GaN) technology. The C-band LNA, targeting a frequency range of 4–6 GHz, achieves an impressive average noise fig. (NF) of 1.5 dB and a gain of 17 dB. For the X-band range of 8–10 GHz, the LNA records a commendable average NF of 1.7 dB and a gain of 16 dB, demonstrating the effectiveness of our novel design strategies.