Transient drift velocity of photoexcited electrons in CdTe

IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Computational Electronics Pub Date : 2024-04-29 DOI:10.1007/s10825-024-02165-6

Dongfeng Liu

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Abstract

The relaxation dynamics of photoexcited carriers of CdTe is vital toward its applications in high-performance optoelectrical devices. In this paper, the dependences of transient drift velocities of photoexcited electrons in bulk CdTe on photoexcitation conditions such as the pump intensity and photoexcitation wavelengths, temperature and externally applied electric field, are systematically investigated by the ensemble Monte Carlo method (EMC). The main scattering mechanisms including nonelastic deformation potential acoustic phonon, deformation potential optical phonon scattering, ionized impurity (II) scattering, and polar optical phonon scattering events, the effects of nonequilibrium phonons, and the Pauli exclusion principle are considered in EMC. The velocity overshoot phenomenon is only found to arise at a low temperature (100 K), with a longer photoexcitation wavelength (640 nm) and under a higher electric field (> 50 kV/cm). The effect of nonequilibrium phonons on electron drift velocity is found to be dependent on the photoexcited carrier density. Our findings may be useful for designing novel CdTe-based optoelectronic devices, which employ nonequilibrium photoexcited carriers to improve the performance.

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碲化镉中光激发电子的瞬时漂移速度

碲化镉光激发载流子的弛豫动力学对其在高性能光电器件中的应用至关重要。本文采用集合蒙特卡洛法（EMC）系统地研究了体碲化镉中光激发电子的瞬态漂移速度与光激发条件（如泵浦强度、光激发波长、温度和外加电场）的关系。EMC 考虑了主要的散射机制，包括非弹性形变势声子、形变势光声子散射、电离杂质 (II) 散射和极性光声子散射事件、非平衡声子的影响以及保利排除原理。只有在低温（100 K）、较长的光激发波长（640 nm）和较高的电场（50 kV/cm）条件下，才会出现速度过冲现象。非平衡声子对电子漂移速度的影响取决于光激发载流子密度。我们的发现可能有助于设计新型碲镉基光电器件，利用非平衡光激发载流子提高器件性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED

CiteScore

4.50

自引率

4.80%

发文量

142

审稿时长

>12 weeks

期刊介绍： he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.