Photoelectrical characterization of heavily doped p-SiC Schottky contacts

IF 1.5 4区物理与天体物理 Q3 PHYSICS, APPLIED

Japanese Journal of Applied Physics Pub Date : 2024-04-18 DOI:10.35848/1347-4065/ad32e0

Hiroki Imabayashi, Hitose Sawazaki, Haruto Yoshimura, Masashi Kato, Kenji Shiojima

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Abstract

The availability of photoelectrical characterizations of heavily Al-doped p-SiC Schottky contacts was clarified. We conducted a systematic study of four samples with different Al doping concentrations from 1 × 10¹⁸ to 5 × 10¹⁹ cm⁻³. Although the current–voltage (I–V) characteristics had lost rectification, reasonable Schottky barrier height (qϕ _B) values were obtained up to 1 × 10¹⁹ cm⁻³ by capacitance voltage, photo response, and scanning internal photoemission microscopy (SIPM) measurements. In the two-dimensional characterization by SIPM, large photocurrent spots corresponding with low qϕ _B were observed in an average density of 10³ to 10⁴ cm⁻². However, except for these spots, a high uniformity of about 2 meV standard deviation was obtained for qϕ _B over the entire observed electrodes. These results indicate that SIPM is able to characterize the inhomogeneity of heavily doped p-SiC contacts with very leaky I–V characteristics.

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重掺杂 p-SiC 肖特基触点的光电特性分析

我们明确了重度掺铝 p-SiC 肖特基触点的光电特性。我们对四种铝掺杂浓度从 1 × 1018 到 5 × 1019 cm-3 的样品进行了系统研究。虽然电流-电压（I-V）特性失去了整流性，但通过电容电压、光响应和扫描内部光发射显微镜（SIPM）测量，获得了高达 1 × 1019 cm-3 的合理肖特基势垒高度（qϕB）值。在通过 SIPM 进行的二维表征中，观察到了与低 qϕB 相对应的大光电流点，平均密度为 103 至 104 cm-2。不过，除了这些光斑之外，整个观察电极的 qϕB 都非常均匀，标准偏差约为 2 meV。这些结果表明，SIPM 能够表征具有极高泄漏 I-V 特性的重掺杂 p-SiC 触点的不均匀性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Japanese Journal of Applied Physics 物理-物理：应用

CiteScore

3.00

自引率

26.70%

发文量

818

审稿时长

3.5 months

期刊介绍： The Japanese Journal of Applied Physics (JJAP) is an international journal for the advancement and dissemination of knowledge in all fields of applied physics. JJAP is a sister journal of the Applied Physics Express (APEX) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP). JJAP publishes articles that significantly contribute to the advancements in the applications of physical principles as well as in the understanding of physics in view of particular applications in mind. Subjects covered by JJAP include the following fields: • Semiconductors, dielectrics, and organic materials • Photonics, quantum electronics, optics, and spectroscopy • Spintronics, superconductivity, and strongly correlated materials • Device physics including quantum information processing • Physics-based circuits and systems • Nanoscale science and technology • Crystal growth, surfaces, interfaces, thin films, and bulk materials • Plasmas, applied atomic and molecular physics, and applied nuclear physics • Device processing, fabrication and measurement technologies, and instrumentation • Cross-disciplinary areas such as bioelectronics/photonics, biosensing, environmental/energy technologies, and MEMS