Superconducting nanostrip single photon detectors fabricated of aluminum thin-films

Abstract

We systematically investigated the detection performance of Al nanostrips for single photons at various wavelengths. The Al films were deposited using magnetron sputtering, and the sophisticated nanostructures and morphology of the deposited films were revealed through high-resolution transmission electron microscopy. The fabricated Al meander nanostrips, with a thickness of 4.2 nm and a width of 178 nm, exhibited a superconducting transition temperature of 2.4 K and a critical current of approximately 5 μA at 0.85 K. While the Al nanostrips demonstrated a saturated internal quantum efficiency for 405-nm photons, the internal detection efficiency exhibited an exponential dependence on bias current without any saturation tendency for 1550-nm photons. This behavior can be attributed to the relatively large diffusion coefficient and coherence length of the Al films. By further narrowing the nanostrip width, the Al-SNSPDs remain capable of effectively detecting single telecom photons to facilitate practical applications.