{"title":"Analytical model of a nanowire-based betavoltaic device","authors":"Amanda Thomas, R. LaPierre","doi":"10.1063/5.0202949","DOIUrl":null,"url":null,"abstract":"An analytical device physics model is presented for determining the energy conversion efficiency of semiconductor nanowire array-based radial (core–shell) p-i-n junction betavoltaic cells for two- and three-dimensional radioisotope source geometries. Optimum short-circuit current density Jsc, open-circuit voltage Voc, fill factor FF, and energy conversion efficiency η are determined for various nanowire properties, including dopant concentration, nanowire length, core diameter, and shell thickness, for Si, GaAs, and GaP material systems. A maximum efficiency of 8.05% was obtained for GaP nanowires with diameter 200nm (p-core diameter, i-shell, and n-shell thicknesses of 24, 29.4, and 58.6 nm, respectively), length 10μm, acceptor and donor concentrations of 1019 and 5×1018cm−3, respectively, and a 3D source geometry.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2024-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Applied Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1063/5.0202949","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
An analytical device physics model is presented for determining the energy conversion efficiency of semiconductor nanowire array-based radial (core–shell) p-i-n junction betavoltaic cells for two- and three-dimensional radioisotope source geometries. Optimum short-circuit current density Jsc, open-circuit voltage Voc, fill factor FF, and energy conversion efficiency η are determined for various nanowire properties, including dopant concentration, nanowire length, core diameter, and shell thickness, for Si, GaAs, and GaP material systems. A maximum efficiency of 8.05% was obtained for GaP nanowires with diameter 200nm (p-core diameter, i-shell, and n-shell thicknesses of 24, 29.4, and 58.6 nm, respectively), length 10μm, acceptor and donor concentrations of 1019 and 5×1018cm−3, respectively, and a 3D source geometry.
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