{"title":"Level-Crossing Characteristics of an Actively Managed Buffer","authors":"A. Chydzinski","doi":"10.3390/jsan13020028","DOIUrl":null,"url":null,"abstract":"In this paper, we examine a buffer with active management that rejects packets basing on the buffer occupancy. Specifically, we derive several metrics characterizing how effectively the algorithm can prevent the queue of packets from becoming too long and how well it assists in flushing the buffer quickly when necessary. First, we compute the probability that the size of the queue is kept below a predefined level L. Second, we calculate the distribution of the amount of time needed to cross level L, the buffer overflow probability, and the average time to buffer overflow. Third, we derive the distribution of the amount of time required to flush the buffer and its average value. A general modeling framework is used in derivations, with a general service time distribution, general rejection function, and a powerful model of the arrival process. The obtained formulas enable, among other things, the solving of many design problems, e.g., those connected with the design of wireless sensor nodes using the N-policy. Several numerical results are provided, including examples of design problems and other calculations.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"333 5","pages":""},"PeriodicalIF":4.3000,"publicationDate":"2024-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Electronic Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.3390/jsan13020028","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, we examine a buffer with active management that rejects packets basing on the buffer occupancy. Specifically, we derive several metrics characterizing how effectively the algorithm can prevent the queue of packets from becoming too long and how well it assists in flushing the buffer quickly when necessary. First, we compute the probability that the size of the queue is kept below a predefined level L. Second, we calculate the distribution of the amount of time needed to cross level L, the buffer overflow probability, and the average time to buffer overflow. Third, we derive the distribution of the amount of time required to flush the buffer and its average value. A general modeling framework is used in derivations, with a general service time distribution, general rejection function, and a powerful model of the arrival process. The obtained formulas enable, among other things, the solving of many design problems, e.g., those connected with the design of wireless sensor nodes using the N-policy. Several numerical results are provided, including examples of design problems and other calculations.
在本文中,我们研究了一种根据缓冲区占用率拒绝数据包的主动管理缓冲区。具体来说,我们得出了几个指标,这些指标描述了算法如何有效地防止数据包队列过长,以及在必要时如何协助快速冲洗缓冲区。首先,我们计算了队列大小保持在预定水平 L 以下的概率。其次,我们计算了跨越水平 L 所需的时间、缓冲区溢出概率和缓冲区溢出平均时间的分布。第三,我们推导出冲洗缓冲区所需时间的分布及其平均值。在推导过程中,我们使用了通用建模框架,包括通用服务时间分布、通用拒绝函数和强大的到达过程模型。所获得的公式可以解决许多设计问题,例如与使用 N 策略设计无线传感器节点相关的问题。文中提供了一些数值结果,包括设计问题和其他计算的示例。
期刊介绍:
ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric.
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