Design and Performance Analysis of Normally -Off Extended Gate (AlGa)2O3/Ga2O3 High Electron Mobility Transistor

IF 1.6 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY

Transactions on Electrical and Electronic Materials Pub Date : 2024-04-16 DOI:10.1007/s42341-024-00537-0

Ashish Raman, Suryansh Raheja, Ravi Ranjan

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常开扩展栅极 (AlGa)2O3/Ga2O3 高电子迁移率晶体管的设计与性能分析

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Transactions on Electrical and Electronic Materials MATERIALS SCIENCE, MULTIDISCIPLINARY-

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4.30

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0.00%

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期刊介绍： The main purpose of Transactions on Electrical and Electronic Materials (Trans. Electr. Electron. Mater. : TEEM) is to provide an open forum to report and share significant new findings on electrical and electronic materials for the materials research communities.The topics covered by the journal include but not limited to new semiconductor materials and devices, electronic ceramics, electrical insulation materials, thin film devices/sensors, display/optical devices, superconducting magnetic materials and devices, nanomaterials and nanodevices, photovoltaic materials and devices, and disaster prevention materials.Transactions on Electrical and Electronic Materials enables professionals in research and industry to keep track of up-to-date developments in the above-mentioned fields and their importance for future developments and success.