{"title":"A 400 V Buck Converter integrated with Gate-Drivers and low-voltage Controller in a 25–600 V mixed-mode SiC CMOS technology","authors":"Utsav Gupta, Hua Zhang, Tianshi Liu, Sundar Isukapati, Emran Ashik, Adam Morgan, Bongmook Lee, Woongje Sung, Anant Agarwal, Ayman Fayed","doi":"10.1007/s10470-024-02270-3","DOIUrl":null,"url":null,"abstract":"<div><p>This paper offers the first demonstration of the design and layout of a fully integrated power converter in a monolithic Silicon Carbide (SiC) technology. A 400 V Buck Converter integrated with Gate-Drivers and Low-Voltage Control circuitry in a 25–600 V Mixed-Mode SiC CMOS technology has been presented in this paper. A new SiC technology has been developed for this design which has a feature size of 1 μm. This technology allows integration of High-Voltage Power FETs and Low-Voltage CMOS circuits on the same die with a common substrate. Both high-side and low-side Power FETs are N-type hence a bootstrap circuit is used, and the gate drivers use an isolated capacitive level shifter to translate the signals from the 25 V domain to the 400 V domain which is the input voltage of the Buck Converter. The load current is 1 A and the nominal output voltage is 100 V thereby meaning that the output power is 100 W. The switching frequency is up to 1 MHz, and the duty cycle can range from 10% to 90% signifying a wide range of operation of the converter.</p></div>","PeriodicalId":7827,"journal":{"name":"Analog Integrated Circuits and Signal Processing","volume":null,"pages":null},"PeriodicalIF":1.2000,"publicationDate":"2024-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Analog Integrated Circuits and Signal Processing","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10470-024-02270-3","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE","Score":null,"Total":0}
引用次数: 0
Abstract
This paper offers the first demonstration of the design and layout of a fully integrated power converter in a monolithic Silicon Carbide (SiC) technology. A 400 V Buck Converter integrated with Gate-Drivers and Low-Voltage Control circuitry in a 25–600 V Mixed-Mode SiC CMOS technology has been presented in this paper. A new SiC technology has been developed for this design which has a feature size of 1 μm. This technology allows integration of High-Voltage Power FETs and Low-Voltage CMOS circuits on the same die with a common substrate. Both high-side and low-side Power FETs are N-type hence a bootstrap circuit is used, and the gate drivers use an isolated capacitive level shifter to translate the signals from the 25 V domain to the 400 V domain which is the input voltage of the Buck Converter. The load current is 1 A and the nominal output voltage is 100 V thereby meaning that the output power is 100 W. The switching frequency is up to 1 MHz, and the duty cycle can range from 10% to 90% signifying a wide range of operation of the converter.
期刊介绍:
Analog Integrated Circuits and Signal Processing is an archival peer reviewed journal dedicated to the design and application of analog, radio frequency (RF), and mixed signal integrated circuits (ICs) as well as signal processing circuits and systems. It features both new research results and tutorial views and reflects the large volume of cutting-edge research activity in the worldwide field today.
A partial list of topics includes analog and mixed signal interface circuits and systems; analog and RFIC design; data converters; active-RC, switched-capacitor, and continuous-time integrated filters; mixed analog/digital VLSI systems; wireless radio transceivers; clock and data recovery circuits; and high speed optoelectronic circuits and systems.