Trap states and carrier diffusion lengths in NiO/β-Ga2O3 heterojunctions

A. Y. Polyakov, E. B. Yakimov, D. S. Saranin, A. Chernykh, Anton Vasilev, P. Gostishchev, A. I. Kochkova, L. Alexanyan, N. Matros, I. Shchemerov, S. Pearton
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Abstract

We report the electrical properties, deep trap spectra, and diffusion lengths of non-equilibrium carriers in Ni Schottky diodes and NiO/Ga2O3 heterojunctions (HJs) prepared on the same n−/n+ β-Ga2O3 epi structures. The heterojunctions decrease the reverse current of Ga2O3 high-power rectifiers. In HJs, in contrast to Schottky diodes, the capacitance and AC conductance show a prominent frequency and temperature dependence, suggesting the presence of two temperature activation processes with activation energies of 0.17 and 0.1 eV. The deep trap spectra of the Schottky diodes and HJs differ by the absence in the HJ of deep electron traps E2* with level near Ec − 0.7 eV considered to be an important center of non-radiative recombination. This correlates with the observed increase in the diffusion length of non-equilibrium charge carriers in the HJs to 370 nm compared to 240 nm in the Schottky diodes. The diffusion length of charge carriers in p-NiO was found to be quite short, 30 nm. Possible reasons for the observed differences and possible origin of the minority-trap-like feature commonly reported to be present in the deep level spectra of HJs and also observed in our experiments are discussed.
NiO/β-Ga2O3 异质结中的阱态和载流子扩散长度
我们报告了在相同的 n/n+ β-Ga2O3 磊晶片结构上制备的 Ni 肖特基二极管和 NiO/Ga2O3 异质结 (HJs) 中非平衡载流子的电学特性、深阱光谱和扩散长度。异质结降低了 Ga2O3 高功率整流器的反向电流。与肖特基二极管相反,在 HJ 中,电容和交流电导显示出显著的频率和温度依赖性,这表明存在两个温度活化过程,其活化能分别为 0.17 和 0.1 eV。肖特基二极管和 HJ 的深阱光谱不同之处在于 HJ 中不存在深电子阱 E2*,其电平接近 Ec - 0.7 eV,被认为是非辐射重组的重要中心。这与所观察到的 HJ 中非平衡态电荷载流子的扩散长度增加到 370 nm(而肖特基二极管的扩散长度为 240 nm)相关。而在 p-NiO 中,电荷载流子的扩散长度很短,仅为 30 nm。我们还讨论了观察到的差异的可能原因,以及 HJ 深电平光谱中常见的、在我们的实验中也观察到的类似少数陷阱特征的可能起源。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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