3D integration of 2D electronics

Darsith Jayachandran, Najam U Sakib, Saptarshi Das
{"title":"3D integration of 2D electronics","authors":"Darsith Jayachandran, Najam U Sakib, Saptarshi Das","doi":"10.1038/s44287-024-00038-5","DOIUrl":null,"url":null,"abstract":"The adoption of three-dimensional (3D) integration has revolutionized NAND flash memory technology, and a similar transformative potential exists for logic circuits, by stacking transistors into the third dimension. This pivotal shift towards 3D integration of logic arrives on the heels of substantial improvements in silicon device structures and their subsequent scaling in size and performance. Yet, advanced scaling requires ultrathin semiconducting channels, which are difficult to achieve using silicon. In this context, field-effect transistors based on two-dimensional (2D) semiconductors have drawn notable attention owing to their atomically thin nature and impressive performance milestones. In addition, 2D materials offer a broader spectrum of functionalities — such as optical, chemical and biological sensing — that extends their utility beyond simple ‘more Moore’ dimensional scaling and enables the development of ‘more than Moore’ technologies. Thus, 3D integration of 2D electronics could bring us unanticipated discoveries, leading to sustainable and energy-efficient computing systems. In this Review, we explore the progress, challenges and future opportunities for 3D integration of 2D electronics. Since the most advanced nodes in silicon are reaching the limits of planar integration, 2D materials could help to advance the semiconductor industry. With the potential for use in multifunctional chips, 2D materials offer combined logic, memory and sensing in integrated 3D chips.","PeriodicalId":501701,"journal":{"name":"Nature Reviews Electrical Engineering","volume":"1 5","pages":"300-316"},"PeriodicalIF":0.0000,"publicationDate":"2024-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s44287-024-00038-5.pdf","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nature Reviews Electrical Engineering","FirstCategoryId":"1085","ListUrlMain":"https://www.nature.com/articles/s44287-024-00038-5","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

The adoption of three-dimensional (3D) integration has revolutionized NAND flash memory technology, and a similar transformative potential exists for logic circuits, by stacking transistors into the third dimension. This pivotal shift towards 3D integration of logic arrives on the heels of substantial improvements in silicon device structures and their subsequent scaling in size and performance. Yet, advanced scaling requires ultrathin semiconducting channels, which are difficult to achieve using silicon. In this context, field-effect transistors based on two-dimensional (2D) semiconductors have drawn notable attention owing to their atomically thin nature and impressive performance milestones. In addition, 2D materials offer a broader spectrum of functionalities — such as optical, chemical and biological sensing — that extends their utility beyond simple ‘more Moore’ dimensional scaling and enables the development of ‘more than Moore’ technologies. Thus, 3D integration of 2D electronics could bring us unanticipated discoveries, leading to sustainable and energy-efficient computing systems. In this Review, we explore the progress, challenges and future opportunities for 3D integration of 2D electronics. Since the most advanced nodes in silicon are reaching the limits of planar integration, 2D materials could help to advance the semiconductor industry. With the potential for use in multifunctional chips, 2D materials offer combined logic, memory and sensing in integrated 3D chips.

Abstract Image

Abstract Image

二维电子器件的三维集成
三维(3D)集成的采用使 NAND 闪存技术发生了革命性的变化,通过将晶体管堆叠到三维空间,逻辑电路也存在着类似的变革潜力。随着硅器件结构的大幅改进及其尺寸和性能的不断扩大,逻辑电路向三维集成的关键转变也随之而来。然而,先进的扩展需要超薄的半导体通道,而使用硅却很难实现这一点。在这种情况下,基于二维(2D)半导体的场效应晶体管因其原子级超薄特性和令人印象深刻的性能里程碑而备受关注。此外,二维材料还具有更广泛的功能(如光学、化学和生物传感),使其用途超越了简单的 "更摩尔 "维度扩展,并实现了 "比摩尔 "技术的发展。因此,二维电子器件的三维集成可能会给我们带来意想不到的发现,从而带来可持续的高能效计算系统。在本综述中,我们将探讨二维电子器件三维集成的进展、挑战和未来机遇。由于最先进的硅节点已达到平面集成的极限,二维材料有助于推动半导体行业的发展。二维材料具有应用于多功能芯片的潜力,可在集成三维芯片中实现逻辑、存储和传感的组合。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信