RF circuit techniques for transition to 5G advanced

IF 1.4 4区 计算机科学 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
F. Balteanu
{"title":"RF circuit techniques for transition to 5G advanced","authors":"F. Balteanu","doi":"10.1017/s1759078724000503","DOIUrl":null,"url":null,"abstract":"\n Worldwide adoption of 5G mobile devices has been one of the main driving engines behind semiconductor industry. Since the initial release in 2020, 5G-enabled devices have surpassed the market penetration of 3G/4G smartphones. 5G brings higher data capacity, low latency, and new applications. These are possible due to lower feature nodes such as FinFET 3 nm/5 nm but also due to improvements of the 5G radio frequency (RF)front-end circuitry. This paper presents 5G RF front-end architectures with novel circuits and measurement details which will be part of future 5G advanced and 6G mobile devices and are easier to be controlled using digital circuitry. The paper presents an envelope-controlled power amplifier (PA) principle, along with a novel simplified calibration architecture designed for 5G/5G+ operating under 6 GHz, as well as for frequency range 2 millimeter-wave PAs. An earlier version of this paper was presented at the 2023 53rd European Microwave Conference and was published in the Proceedings [Balteanu F, Thoomu K, Pingale A, Venimadhavan S, Sarkar S, Choi Y, Modi H, Drogi S, Lee J and Agarwal B (2023) Enabling RF circuit techniques for 5G and beyond In 53rd European Microwave Conference (EuMC), Berlin, Germany, 22–25].","PeriodicalId":49052,"journal":{"name":"International Journal of Microwave and Wireless Technologies","volume":null,"pages":null},"PeriodicalIF":1.4000,"publicationDate":"2024-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Microwave and Wireless Technologies","FirstCategoryId":"94","ListUrlMain":"https://doi.org/10.1017/s1759078724000503","RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

Worldwide adoption of 5G mobile devices has been one of the main driving engines behind semiconductor industry. Since the initial release in 2020, 5G-enabled devices have surpassed the market penetration of 3G/4G smartphones. 5G brings higher data capacity, low latency, and new applications. These are possible due to lower feature nodes such as FinFET 3 nm/5 nm but also due to improvements of the 5G radio frequency (RF)front-end circuitry. This paper presents 5G RF front-end architectures with novel circuits and measurement details which will be part of future 5G advanced and 6G mobile devices and are easier to be controlled using digital circuitry. The paper presents an envelope-controlled power amplifier (PA) principle, along with a novel simplified calibration architecture designed for 5G/5G+ operating under 6 GHz, as well as for frequency range 2 millimeter-wave PAs. An earlier version of this paper was presented at the 2023 53rd European Microwave Conference and was published in the Proceedings [Balteanu F, Thoomu K, Pingale A, Venimadhavan S, Sarkar S, Choi Y, Modi H, Drogi S, Lee J and Agarwal B (2023) Enabling RF circuit techniques for 5G and beyond In 53rd European Microwave Conference (EuMC), Berlin, Germany, 22–25].
向 5G 先进技术过渡的射频电路技术
全球对 5G 移动设备的采用已成为半导体行业的主要驱动力之一。自 2020 年首次发布以来,支持 5G 的设备的市场渗透率已超过 3G/4G 智能手机。5G 带来了更高的数据容量、低延迟和新应用。这不仅得益于 FinFET 3 nm/5 nm 等更低的特征节点,还得益于 5G 射频(RF)前端电路的改进。本文介绍了具有新颖电路和测量细节的 5G 射频前端架构,它将成为未来 5G 先进设备和 6G 移动设备的一部分,并且更易于使用数字电路进行控制。本文介绍了一种包络控制功率放大器(PA)原理,以及专为工作频率低于 6 GHz 的 5G/5G+ 和频率范围 2 毫米波功率放大器设计的新型简化校准架构。本文的早期版本已在 2023 年第 53 届欧洲微波会议上发表,并出版了论文集[Balteanu F, Thoomu K, Pingale A, Venimadhavan S, Sarkar S, Choi Y, Modi H, Drogi S, Lee J and Agarwal B (2023) Enabling RF circuit techniques for 5G and beyond In 53rd European Microwave Conference (EuMC), Berlin, Germany, 22-25].
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来源期刊
International Journal of Microwave and Wireless Technologies
International Journal of Microwave and Wireless Technologies ENGINEERING, ELECTRICAL & ELECTRONIC-TELECOMMUNICATIONS
CiteScore
3.50
自引率
7.10%
发文量
130
审稿时长
6-12 weeks
期刊介绍: The prime objective of the International Journal of Microwave and Wireless Technologies is to enhance the communication between microwave engineers throughout the world. It is therefore interdisciplinary and application oriented, providing a platform for the microwave industry. Coverage includes: applied electromagnetic field theory (antennas, transmission lines and waveguides), components (passive structures and semiconductor device technologies), analogue and mixed-signal circuits, systems, optical-microwave interactions, electromagnetic compatibility, industrial applications, biological effects and medical applications.
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