{"title":"RF circuit techniques for transition to 5G advanced","authors":"F. Balteanu","doi":"10.1017/s1759078724000503","DOIUrl":null,"url":null,"abstract":"\n Worldwide adoption of 5G mobile devices has been one of the main driving engines behind semiconductor industry. Since the initial release in 2020, 5G-enabled devices have surpassed the market penetration of 3G/4G smartphones. 5G brings higher data capacity, low latency, and new applications. These are possible due to lower feature nodes such as FinFET 3 nm/5 nm but also due to improvements of the 5G radio frequency (RF)front-end circuitry. This paper presents 5G RF front-end architectures with novel circuits and measurement details which will be part of future 5G advanced and 6G mobile devices and are easier to be controlled using digital circuitry. The paper presents an envelope-controlled power amplifier (PA) principle, along with a novel simplified calibration architecture designed for 5G/5G+ operating under 6 GHz, as well as for frequency range 2 millimeter-wave PAs. An earlier version of this paper was presented at the 2023 53rd European Microwave Conference and was published in the Proceedings [Balteanu F, Thoomu K, Pingale A, Venimadhavan S, Sarkar S, Choi Y, Modi H, Drogi S, Lee J and Agarwal B (2023) Enabling RF circuit techniques for 5G and beyond In 53rd European Microwave Conference (EuMC), Berlin, Germany, 22–25].","PeriodicalId":49052,"journal":{"name":"International Journal of Microwave and Wireless Technologies","volume":null,"pages":null},"PeriodicalIF":1.4000,"publicationDate":"2024-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Microwave and Wireless Technologies","FirstCategoryId":"94","ListUrlMain":"https://doi.org/10.1017/s1759078724000503","RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Worldwide adoption of 5G mobile devices has been one of the main driving engines behind semiconductor industry. Since the initial release in 2020, 5G-enabled devices have surpassed the market penetration of 3G/4G smartphones. 5G brings higher data capacity, low latency, and new applications. These are possible due to lower feature nodes such as FinFET 3 nm/5 nm but also due to improvements of the 5G radio frequency (RF)front-end circuitry. This paper presents 5G RF front-end architectures with novel circuits and measurement details which will be part of future 5G advanced and 6G mobile devices and are easier to be controlled using digital circuitry. The paper presents an envelope-controlled power amplifier (PA) principle, along with a novel simplified calibration architecture designed for 5G/5G+ operating under 6 GHz, as well as for frequency range 2 millimeter-wave PAs. An earlier version of this paper was presented at the 2023 53rd European Microwave Conference and was published in the Proceedings [Balteanu F, Thoomu K, Pingale A, Venimadhavan S, Sarkar S, Choi Y, Modi H, Drogi S, Lee J and Agarwal B (2023) Enabling RF circuit techniques for 5G and beyond In 53rd European Microwave Conference (EuMC), Berlin, Germany, 22–25].
期刊介绍:
The prime objective of the International Journal of Microwave and Wireless Technologies is to enhance the communication between microwave engineers throughout the world. It is therefore interdisciplinary and application oriented, providing a platform for the microwave industry. Coverage includes: applied electromagnetic field theory (antennas, transmission lines and waveguides), components (passive structures and semiconductor device technologies), analogue and mixed-signal circuits, systems, optical-microwave interactions, electromagnetic compatibility, industrial applications, biological effects and medical applications.