Systematic improvements in transmon qubit coherence enabled by niobium surface encapsulation

IF 6.6 1区 物理与天体物理 Q1 PHYSICS, APPLIED
Mustafa Bal, Akshay A. Murthy, Shaojiang Zhu, Francesco Crisa, Xinyuan You, Ziwen Huang, Tanay Roy, Jaeyel Lee, David van Zanten, Roman Pilipenko, Ivan Nekrashevich, Andrei Lunin, Daniel Bafia, Yulia Krasnikova, Cameron J. Kopas, Ella O. Lachman, Duncan Miller, Josh Y. Mutus, Matthew J. Reagor, Hilal Cansizoglu, Jayss Marshall, David P. Pappas, Kim Vu, Kameshwar Yadavalli, Jin-Su Oh, Lin Zhou, Matthew J. Kramer, Florent Lecocq, Dominic P. Goronzy, Carlos G. Torres-Castanedo, P. Graham Pritchard, Vinayak P. Dravid, James M. Rondinelli, Michael J. Bedzyk, Mark C. Hersam, John Zasadzinski, Jens Koch, James A. Sauls, Alexander Romanenko, Anna Grassellino
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Abstract

We present a transmon qubit fabrication technique that yields systematic improvements in T1 relaxation times. We encapsulate the surface of niobium and prevent the formation of its lossy surface oxide. By maintaining the same superconducting metal and only varying the surface, this comparative investigation examining different capping materials, such as tantalum, aluminum, titanium nitride, and gold, as well as substrates across different qubit foundries demonstrates the detrimental impact that niobium oxides have on coherence times of superconducting qubits, compared to native oxides of tantalum, aluminum or titanium nitride. Our surface-encapsulated niobium qubit devices exhibit T1 relaxation times 2–5 times longer than baseline qubit devices with native niobium oxides. When capping niobium with tantalum, we obtain median qubit lifetimes above 300 μs, with maximum values up to 600 μs. Our comparative structural and chemical analysis provides insight into why amorphous niobium oxides may induce higher losses compared to other amorphous oxides.

Abstract Image

通过铌表面封装系统地改善跨文量子比特相干性
我们提出了一种能系统地改善 T1 驰豫时间的跨文量子比特制造技术。我们封装了铌的表面,防止其表面形成有损氧化物。通过保持相同的超导金属而仅改变表面,这项比较研究对不同的封装材料(如钽、铝、氮化钛和金)以及不同量子位代工厂的衬底进行了检验,结果表明,与钽、铝或氮化钛的原生氧化物相比,铌氧化物对超导量子位的相干时间有不利影响。我们的表面封装铌量子位器件的 T1 弛豫时间比使用原生铌氧化物的基线量子位器件长 2-5 倍。当用钽封装铌时,我们获得的量子比特寿命中值超过 300 μs,最大值可达 600 μs。我们的结构和化学分析比较深入地揭示了为什么与其他非晶氧化物相比,非晶铌氧化物可能会导致更高的损耗。
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来源期刊
npj Quantum Information
npj Quantum Information Computer Science-Computer Science (miscellaneous)
CiteScore
13.70
自引率
3.90%
发文量
130
审稿时长
29 weeks
期刊介绍: The scope of npj Quantum Information spans across all relevant disciplines, fields, approaches and levels and so considers outstanding work ranging from fundamental research to applications and technologies.
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