The Structure of Domain and Antiphase Boundaries in κ-Phase of Gallium Oxide

IF 0.6 4区 材料科学 Q4 CRYSTALLOGRAPHY
O. F. Vyvenko, A. S. Bondarenko, E. V. Ubyivovk, S. V. Shapenkov, A. I. Pechnikov, V. I. Nikolaev, S. I. Stepanov
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引用次数: 0

Abstract

The results of an experimental study of the real structure of thin films of κ-phase gallium oxide are reported. It has been established by electron backscattering diffraction in a scanning electron microscope and by transmission electron microscopy that gallium oxide single microcrystals consist of three types of rotating domains of the orthorhombic symmetry, which are rotated relative to each other around the growth axis by an angle of 120°. Single-crystal domains are characterized by a high density of straight antiphase boundaries, which, when intersecting, form a significant fraction of the domain wall structure.

Abstract Image

Abstract Image

氧化镓κ相中的畴界和反相界结构
摘要 报告了对κ相氧化镓薄膜真实结构的实验研究结果。通过扫描电子显微镜中的电子反向散射衍射和透射电子显微镜,确定了氧化镓单微晶由三种类型的正交对称旋转畴组成,这些旋转畴围绕生长轴相对旋转 120°。单晶畴的特点是高密度的反相直线边界,当它们相交时,形成畴壁结构的重要部分。
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来源期刊
Crystallography Reports
Crystallography Reports 化学-晶体学
CiteScore
1.10
自引率
28.60%
发文量
96
审稿时长
4-8 weeks
期刊介绍: Crystallography Reports is a journal that publishes original articles short communications, and reviews on various aspects of crystallography: diffraction and scattering of X-rays, electrons, and neutrons, determination of crystal structure of inorganic and organic substances, including proteins and other biological substances; UV-VIS and IR spectroscopy; growth, imperfect structure and physical properties of crystals; thin films, liquid crystals, nanomaterials, partially disordered systems, and the methods of studies.
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