Density of Unoccupied Electronic States of the Ultrathin Layers of Dibromo-Bianthracene on the Surface of Layer-by-Layer Grown ZnO
IF 0.6
4区 材料科学
Q4 CRYSTALLOGRAPHY
引用次数: 0
Abstract
The surface topography and density of unoccupied electronic states at thermal deposition of ultrathin dibromo-bianthracene films on the ZnO surface have been studied. The electronic characteristics of unoccupied electronic states during growth of dibromo-bianthracene films to a thickness of 10 nm have been investigated by total current spectroscopy using a probe electron beam. The experimental dependences have been analyzed using theoretical calculation of the orbital energies for dibromo-bianthracene molecules by the method of density functional theory (DFT).
逐层生长氧化锌表面二溴卞蒽超薄层的未占电子态密度
摘要 研究了在氧化锌表面热沉积超薄二溴掺杂蒽薄膜时的表面形貌和未占电子态密度。利用探针电子束，通过总电流光谱法研究了厚度为 10 纳米的二溴掺杂蒽薄膜生长过程中未占电子态的电子特性。通过密度泛函理论（DFT）方法对二溴骈蒽分子的轨道能量进行理论计算，分析了实验的相关性。
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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来源期刊
Crystallography Reports
化学-晶体学
CiteScore
1.10
自引率
28.60%
发文量
96
审稿时长
4-8 weeks
期刊介绍：
Crystallography Reports is a journal that publishes original articles short communications, and reviews on various aspects of crystallography: diffraction and scattering of X-rays, electrons, and neutrons, determination of crystal structure of inorganic and organic substances, including proteins and other biological substances; UV-VIS and IR spectroscopy; growth, imperfect structure and physical properties of crystals; thin films, liquid crystals, nanomaterials, partially disordered systems, and the methods of studies.
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