A. V. Solomonov, S. S. Sakhonenkov, E. O. Filatova
{"title":"Study of the Effect of Si and Be Barrier Layers on Crystallization of Cr/Sc Multilayer X-ray Mirror","authors":"A. V. Solomonov, S. S. Sakhonenkov, E. O. Filatova","doi":"10.1134/s1063774523601284","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The influence of Si and Be barrier layers on the mixing of thin layers of multilayer X-ray mirrors based on Cr and Sc in a wide temperature range has been studied by X-ray reflectivity, X-ray diffraction, and transmission electron microscopy. Annealing of the Si/[Cr/Sc]<sub>200</sub> system is found to be a catalyst of the mixing process. Complete mixing of layers occurs in a sample heated at 450°C for 1 h. The structure becomes textured with a preferred orientation [001] of the Sc layer perpendicular to the substrate. Introduction of a Be barrier layer into the Si/[Cr/Sc]<sub>200</sub> system limits mixing of chromium and scandium layers during annealing to 350°C, but the structure degrades completely at 450°C. A beryllium barrier layer excludes texturing and growth of grains in the system, but it does not impede crystallization. The thin Si interlayer inserted between Cr and Sc layers limits their mixing and retains the multilayer character and amorphicity of the system at temperatures up to 450°C.</p>","PeriodicalId":527,"journal":{"name":"Crystallography Reports","volume":null,"pages":null},"PeriodicalIF":0.6000,"publicationDate":"2024-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Crystallography Reports","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1134/s1063774523601284","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}
引用次数: 0
Abstract
The influence of Si and Be barrier layers on the mixing of thin layers of multilayer X-ray mirrors based on Cr and Sc in a wide temperature range has been studied by X-ray reflectivity, X-ray diffraction, and transmission electron microscopy. Annealing of the Si/[Cr/Sc]200 system is found to be a catalyst of the mixing process. Complete mixing of layers occurs in a sample heated at 450°C for 1 h. The structure becomes textured with a preferred orientation [001] of the Sc layer perpendicular to the substrate. Introduction of a Be barrier layer into the Si/[Cr/Sc]200 system limits mixing of chromium and scandium layers during annealing to 350°C, but the structure degrades completely at 450°C. A beryllium barrier layer excludes texturing and growth of grains in the system, but it does not impede crystallization. The thin Si interlayer inserted between Cr and Sc layers limits their mixing and retains the multilayer character and amorphicity of the system at temperatures up to 450°C.
期刊介绍：
Crystallography Reports is a journal that publishes original articles short communications, and reviews on various aspects of crystallography: diffraction and scattering of X-rays, electrons, and neutrons, determination of crystal structure of inorganic and organic substances, including proteins and other biological substances; UV-VIS and IR spectroscopy; growth, imperfect structure and physical properties of crystals; thin films, liquid crystals, nanomaterials, partially disordered systems, and the methods of studies.
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