The Effect of Bi0.5Li0.5ZrO3-SrSnO3 Composite Doping on the Construction of Polymorphic Phase Boundaries and Enhanced Electrical Properties of K0.45Na0.55Nb0.965Sb0.035O3 Piezoelectric Ceramics

IF 1.8 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

ECS Journal of Solid State Science and Technology Pub Date : 2024-04-17 DOI:10.1149/2162-8777/ad3c20

Ruihua Zheng, Qiyi Yin, Fei Lin, Yulin Zhang, Quanzheng Zhang, Kunhong Hu, Kejie Yang, Yangyang Zhu, Wangzu Zou

{"title":"The Effect of Bi0.5Li0.5ZrO3-SrSnO3 Composite Doping on the Construction of Polymorphic Phase Boundaries and Enhanced Electrical Properties of K0.45Na0.55Nb0.965Sb0.035O3 Piezoelectric Ceramics","authors":"Ruihua Zheng, Qiyi Yin, Fei Lin, Yulin Zhang, Quanzheng Zhang, Kunhong Hu, Kejie Yang, Yangyang Zhu, Wangzu Zou","doi":"10.1149/2162-8777/ad3c20","DOIUrl":null,"url":null,"abstract":"In this experiment, a new lead-free piezoelectric ceramics (1−<italic toggle=\"yes\">x</italic>)K0.45Na0.55Nb0.965Sb0.035O3−<italic toggle=\"yes\">x</italic>(0.9Bi0.5Li0.5ZrO3−0.1SrSnO3) were prepared by the conventional solid-phase method, and the effects of the doping amount of 0.9Bi0.5Li0.5ZrO3−0.1SrSnO3 on the K0.45Na0.55Nb0.965Sb0.035O3 ceramics on the crystal structure, microstructure, microscopic structure and electrical properties. All the doping ions entered the KNN lattice and formed a dense solid solution with a single-phase structure, and the phase structure of the ceramics coexisted from orthorhombic (O) to orthorhombic-tetragonal (O-T) phases in the range of 0 ≤ <italic toggle=\"yes\">x</italic> ≤ 0.03, and transitioned to rhombohedral-tetragonal (R-T) phase coexistence when 0.035 ≤ <italic toggle=\"yes\">x</italic> ≤ 0.05. The electrical properties of the ceramics were analyzed and the polymorphic phase boundary (PPB) region was obtained at <italic toggle=\"yes\">x</italic> = 0.035 and had the best overall properties: <italic toggle=\"yes\">d</italic>\n33 = 324pC/N, <italic toggle=\"yes\">k</italic>\np = 49%, <italic toggle=\"yes\">ε</italic>\nr = 1479, tan<italic toggle=\"yes\">δ</italic> = 3.21%, <italic toggle=\"yes\">P</italic>\nr = 31.98 <italic toggle=\"yes\">μ</italic>C/cm2, <italic toggle=\"yes\">E</italic>\nc = 16.83 kV cm−1 and <italic toggle=\"yes\">T</italic>\nC = 293°C. By The microstructural analysis of the ceramics showed that the appropriate amount of compound doping of the second element enhances the denseness of the ceramics as well as makes the grains uniformly distributed. These results indicate that the ceramics of this system have great prospects for future applications in the field of lead-free piezoelectric ceramics.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"99 1","pages":""},"PeriodicalIF":1.8000,"publicationDate":"2024-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ECS Journal of Solid State Science and Technology","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1149/2162-8777/ad3c20","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

Abstract

In this experiment, a new lead-free piezoelectric ceramics (1−x)K_0.45Na_0.55Nb_0.965Sb_0.035O₃−x(0.9Bi_0.5Li_0.5ZrO₃−0.1SrSnO₃) were prepared by the conventional solid-phase method, and the effects of the doping amount of 0.9Bi_0.5Li_0.5ZrO₃−0.1SrSnO₃ on the K_0.45Na_0.55Nb_0.965Sb_0.035O₃ ceramics on the crystal structure, microstructure, microscopic structure and electrical properties. All the doping ions entered the KNN lattice and formed a dense solid solution with a single-phase structure, and the phase structure of the ceramics coexisted from orthorhombic (O) to orthorhombic-tetragonal (O-T) phases in the range of 0 ≤ x ≤ 0.03, and transitioned to rhombohedral-tetragonal (R-T) phase coexistence when 0.035 ≤ x ≤ 0.05. The electrical properties of the ceramics were analyzed and the polymorphic phase boundary (PPB) region was obtained at x = 0.035 and had the best overall properties: d ₃₃ = 324pC/N, k _p = 49%, ε _r = 1479, tanδ = 3.21%, P _r = 31.98 μC/cm², E _c = 16.83 kV cm⁻¹ and T _C = 293°C. By The microstructural analysis of the ceramics showed that the appropriate amount of compound doping of the second element enhances the denseness of the ceramics as well as makes the grains uniformly distributed. These results indicate that the ceramics of this system have great prospects for future applications in the field of lead-free piezoelectric ceramics.

查看原文本刊更多论文

Bi0.5Li0.5ZrO3-SrSnO3 复合掺杂对 K0.45Na0.55Nb0.965Sb0.035O3 压电陶瓷多晶相界构建和电性能增强的影响

本实验采用传统固相法制备了新型无铅压电陶瓷 (1-x)K0.45Na0.55Nb0.965Sb0.035O3-x(0.9Bi0.5Li0.5ZrO3-0.1SrSnO3)，并研究了 0.9Bi0.5Li0.5ZrO3-0.1SrSnO3 掺杂量对 K0.45Na0.55Nb0.965Sb0.035O3 陶瓷的影响。9Bi0.5Li0.5ZrO3-0.1SrSnO3对K0.45Na0.55Nb0.965Sb0.035O3陶瓷的晶体结构、显微结构、微观结构和电学性能的影响。掺杂离子全部进入KNN晶格，形成单相结构的致密固溶体，陶瓷的相结构在0≤x≤0.03范围内由正方体（O）相共存到正方体-四方体（O-T）相共存，当0.035≤x≤0.05时过渡到斜方体-四方体（R-T）相共存。对陶瓷的电学特性进行了分析，在 x = 0.035 时获得了多晶相边界（PPB）区域，该区域具有最佳的整体特性：d33 = 324pC/N，kp = 49%，εr = 1479，tanδ = 3.21%，Pr = 31.98 μC/cm2，Ec = 16.83 kV cm-1，TC = 293°C。陶瓷的微观结构分析表明，第二元素的适量复合掺杂提高了陶瓷的致密性，并使晶粒均匀分布。这些结果表明，该体系的陶瓷在无铅压电陶瓷领域具有广阔的应用前景。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

ECS Journal of Solid State Science and Technology MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED

CiteScore

4.50

自引率

13.60%

发文量

455

期刊介绍： The ECS Journal of Solid State Science and Technology (JSS) was launched in 2012, and publishes outstanding research covering fundamental and applied areas of solid state science and technology, including experimental and theoretical aspects of the chemistry and physics of materials and devices. JSS has five topical interest areas: carbon nanostructures and devices dielectric science and materials electronic materials and processing electronic and photonic devices and systems luminescence and display materials, devices and processing.