Radiation Hardened by Design-based Voltage Controlled Oscillator for Low Power Phase Locked Loop Application

Rachana Ahirwar, Manisha Pattanaik, Pankaj Srivastava
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Abstract

A radiation-hardened-by-design (RHBD) current-starved-ring voltage-controlled oscillator (CSR-VCO) design is proposed based on the separation of gate input technique to mitigate single event effects (SEEs) for phase-locked loop (PLL) implementation. A double-exponential (DE) current model is used to analyze the effect of single event transient (SET) at the output of the proposed RHBD CSR-VCO. The proposed RHBD CSR-VCO is implemented in United Microelectronics Corporation (UMC) 65 nm CMOS technology and a 71.6% improvement is achieved in phase displacement as compared to conventional VCO. The oscillation frequency of 1.75 GHz is obtained for the proposed RHBD CSR-VCO with a tuning range from 0.40 GHz to 2.23 GHz and power dissipation of 1.368 mW. The proposed RHBD CSR-VCO is protected against radiation with deposited charges up to 1050 fC and achieved a higher figure-of-merit (FOM) when compared to the recently reported VCOs and PLLs. This shows that even in a radiation-prone environment, the RHBD PLL can achieve excellent performance and be employed successfully in low-power, high-speed communication applications.

Abstract Image

用于低功率锁相环应用的基于设计的抗辐射压控振荡器
基于栅极输入分离技术,提出了一种辐射加固设计(RHBD)电流匮乏环压控振荡器(CSR-VCO)设计,以减轻锁相环(PLL)实施过程中的单事件效应(SEE)。使用双指数(DE)电流模型分析了拟议 RHBD CSR-VCO 输出端的单事件瞬态(SET)效应。拟议的 RHBD CSR-VCO 采用联合微电子公司 (UMC) 65 纳米 CMOS 技术实现,与传统 VCO 相比,相位位移提高了 71.6%。RHBD CSR-VCO 的振荡频率为 1.75 GHz,调谐范围为 0.40 GHz 至 2.23 GHz,功耗为 1.368 mW。与最近报道的 VCO 和 PLL 相比,拟议的 RHBD CSR-VCO 可抵御高达 1050 fC 的沉积电荷辐射,并实现了更高的性能系数 (FOM)。这表明,即使在易受辐射影响的环境中,RHBD PLL 也能实现出色的性能,并成功应用于低功耗、高速通信应用中。
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