Safe practices for mobility evaluation in field-effect transistors and Hall effect measurements using emerging materials

IF 33.7 1区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

Nature Electronics Pub Date : 2024-04-17 DOI:10.1038/s41928-024-01154-8

Vitaly Podzorov, Vladimir Bruevich

引用次数: 0

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使用新兴材料进行场效应晶体管迁移率评估和霍尔效应测量的安全实践

源自 Liu, A. et al. Nature Electronics https://doi.org/10.1038/s41928-022-00712-2 (2022)电荷载流子迁移率 (μ)的精确实验测定对于开发新型电子器件至关重要。最近，Liu 等人1 报道了基于溶液涂层纳米晶 CsSnI3 薄膜的包晶场效应晶体管（FET），其场效应迁移率（μFET）高达 55 cm2 V-1 s-1，霍尔效应测量的迁移率（μHall）高达 486 cm2 V-1 s-1。然而，有关场效应晶体管和霍尔测量的几个问题表明高估了迁移率，特别是场效应晶体管的非线性、噪声和滞后特性，霍尔和场效应晶体管载流子密度之间三个数量级的差异，以及在这些器件中应用的高激励电流和焦耳功率密度。

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来源期刊

Nature Electronics Engineering-Electrical and Electronic Engineering

CiteScore

47.50

自引率

2.30%

发文量

159

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