TCAD Simulation of Novel Recess Gate Common Drain Dual Channel AlGaN/GaN HEMT for Small Signal Performance

IF 2.5 4区计算机科学 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IETE Technical Review Pub Date : 2024-04-15 DOI:10.1080/02564602.2024.2341086

P. Pal, Y. Pratap, S. Kabra

引用次数: 0

Abstract

In this paper, DC and RF characteristics of Recess Gate Common Drain Dual Channel (CDDC) AlGaN/GaN HEMT have been investigated. The performance of the device in terms of the various figures of meri...

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针对小信号性能的新型凹槽栅共漏双通道 AlGaN/GaN HEMT 的 TCAD 仿真

本文研究了凹栅共漏极双通道（CDDC）AlGaN/GaN HEMT 的直流和射频特性。该器件在各种性能指标方面的表现令人满意。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IETE Technical Review 工程技术-电信学

CiteScore

5.70

自引率

4.20%

发文量

审稿时长

9 months

期刊介绍： IETE Technical Review is a world leading journal which publishes state-of-the-art review papers and in-depth tutorial papers on current and futuristic technologies in the area of electronics and telecommunications engineering. We also publish original research papers which demonstrate significant advances.