Kuan-Chang Chang, Xibei Feng, Xinqing Duan, Huangbai Liu, Yanxin Liu, Zehui Peng, Xinnan Lin and Lei Li
{"title":"Integrating ultraviolet sensing and memory functions in gallium nitride-based optoelectronic devices†","authors":"Kuan-Chang Chang, Xibei Feng, Xinqing Duan, Huangbai Liu, Yanxin Liu, Zehui Peng, Xinnan Lin and Lei Li","doi":"10.1039/D3NH00560G","DOIUrl":null,"url":null,"abstract":"<p >Optoelectronic devices present a promising avenue for emulating the human visual system. However, existing devices struggle to maintain optical image information after removing external stimuli, preventing the integration of image perception and memory. The development of optoelectronic memory devices offers a feasible solution to bridge this gap. Simultaneously, the artificial vision for perceiving and storing ultraviolet (UV) images is particularly important because UV light carries information imperceptible to the naked eye. This study introduces a multi-level UV optoelectronic memory based on gallium nitride (GaN), seamlessly integrating UV sensing and memory functions within a single device. The embedded SiO<small><sub>2</sub></small> side-gates around source and drain regions effectively extend the lifetime of photo-generated carriers, enabling dual-mode storage of UV signals in terms of threshold voltage and ON-state current. The optoelectronic memory demonstrates excellent robustness with the retention time exceeding 4 × 10<small><sup>4</sup></small> s and programming/erasing cycles surpassing 1 × 10<small><sup>5</sup></small>. Adjusting the gate voltage achieves five distinct storage states, each characterized by excellent retention, and efficiently modulates erasure times for rapid erasure. Furthermore, the integration of the GaN optoelectronic memory array successfully captures and stably stores specific UV images for over 7 days. The study marks a significant stride in optoelectronic memories, showcasing their potential in applications requiring prolonged retention.</p>","PeriodicalId":93,"journal":{"name":"Nanoscale Horizons","volume":null,"pages":null},"PeriodicalIF":8.0000,"publicationDate":"2024-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanoscale Horizons","FirstCategoryId":"88","ListUrlMain":"https://pubs.rsc.org/en/content/articlelanding/2024/nh/d3nh00560g","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0
Abstract
Optoelectronic devices present a promising avenue for emulating the human visual system. However, existing devices struggle to maintain optical image information after removing external stimuli, preventing the integration of image perception and memory. The development of optoelectronic memory devices offers a feasible solution to bridge this gap. Simultaneously, the artificial vision for perceiving and storing ultraviolet (UV) images is particularly important because UV light carries information imperceptible to the naked eye. This study introduces a multi-level UV optoelectronic memory based on gallium nitride (GaN), seamlessly integrating UV sensing and memory functions within a single device. The embedded SiO2 side-gates around source and drain regions effectively extend the lifetime of photo-generated carriers, enabling dual-mode storage of UV signals in terms of threshold voltage and ON-state current. The optoelectronic memory demonstrates excellent robustness with the retention time exceeding 4 × 104 s and programming/erasing cycles surpassing 1 × 105. Adjusting the gate voltage achieves five distinct storage states, each characterized by excellent retention, and efficiently modulates erasure times for rapid erasure. Furthermore, the integration of the GaN optoelectronic memory array successfully captures and stably stores specific UV images for over 7 days. The study marks a significant stride in optoelectronic memories, showcasing their potential in applications requiring prolonged retention.
期刊介绍:
Nanoscale Horizons stands out as a premier journal for publishing exceptionally high-quality and innovative nanoscience and nanotechnology. The emphasis lies on original research that introduces a new concept or a novel perspective (a conceptual advance), prioritizing this over reporting technological improvements. Nevertheless, outstanding articles showcasing truly groundbreaking developments, including record-breaking performance, may also find a place in the journal. Published work must be of substantial general interest to our broad and diverse readership across the nanoscience and nanotechnology community.