Comparison of Single Event Effect and Space Electrostatic Discharge Effect on FPGA Signal Transmission

Rongxing Cao, Yan Liu, Yulong Cai, Bo Mei, Lin Zhao, Jiayu Tian, Shuai Cui, He Lv, Xianghua Zeng, Yuxiong Xue
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Abstract

As the central control component in aerospace products, SRAM-based FPGA finds extensive application in space. In its operational context, the space radiation environment introduces single event effect (SEE) and space electrostatic discharge effect (SESD) in FPGAs. This paper investigates SEE and SESD in SRAM-based FPGA using an integrated simulation method that combines device-level and circuit-level analyses. The findings reveal that the distinction in signal transmission primarily lies in the number of upsets and their correlation with the initial state. SEE can lead to single-bit or multi-bit upsets in SRAM, while SESD typically induces multi-bit upsets (MBU) in SRAM. Furthermore, the logic upset caused by SEE exhibits almost no correlation with the initial state of SRAM. Conversely, the upset caused by SESD is linked to the initial state, and the threshold voltage of Single Event Upsets (SEU) in different initial states is not uniform.

单次事件效应和空间静电放电效应对 FPGA 信号传输的影响比较
作为航空航天产品的核心控制部件,基于 SRAM 的 FPGA 在太空中得到了广泛应用。在其运行环境中,空间辐射环境会给 FPGA 带来单事件效应(SEE)和空间静电放电效应(SESD)。本文采用结合器件级和电路级分析的综合仿真方法,研究了基于 SRAM 的 FPGA 中的 SEE 和 SESD。研究结果表明,信号传输的区别主要在于颠倒的次数及其与初始状态的相关性。SEE 可导致 SRAM 中的单位或多位中断,而 SESD 通常会引起 SRAM 中的多位中断 (MBU)。此外,SEE 引起的逻辑中断与 SRAM 的初始状态几乎没有关联。相反,SESD 引起的破坏与初始状态有关,不同初始状态下的单事件破坏 (SEU) 阈值电压并不一致。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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