Exploiting the Correlation Between 1/f Noise-Dark Current in PIN InGaAs Photodetectors

IF 2.2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of Quantum Electronics Pub Date : 2024-04-02 DOI:10.1109/JQE.2024.3384240

Chuang Li;Hezhuang Liu;Jingyi Wang;Daqian Guo;Baile Chen;Jiang Wu

{"title":"Exploiting the Correlation Between 1/f Noise-Dark Current in PIN InGaAs Photodetectors","authors":"Chuang Li;Hezhuang Liu;Jingyi Wang;Daqian Guo;Baile Chen;Jiang Wu","doi":"10.1109/JQE.2024.3384240","DOIUrl":null,"url":null,"abstract":"High performance InGaAs photodetectors are highly desired for the ever-growing photoelectric industry. Despite maturity at the production level, the underlying causes of noise and dark current need clarification for further improvement. We studied the dark current and noise characteristics in PIN In0.53Ga0.47As photodiodes with different mesa sizes. The dark current noise exhibits a clear spectral 1/\n<inline-formula> <tex-math>$f$ </tex-math></inline-formula>\n shape in all conditions. The results at low temperatures suggest that the dark current is dominated by the sidewall shunt paths while generation-recombination dark current comes into play at high temperatures. The noise intensity follows the squared leakage current in the temperature range of 100-240 K. Since the extracted activation energy of 1/\n<inline-formula> <tex-math>$f$ </tex-math></inline-formula>\n noise approximates that of the surface leakage current, suggesting that the surface leakage current may be the primary factor of the 1/\n<inline-formula> <tex-math>$f$ </tex-math></inline-formula>\n noise.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":2.2000,"publicationDate":"2024-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10488471/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

High performance InGaAs photodetectors are highly desired for the ever-growing photoelectric industry. Despite maturity at the production level, the underlying causes of noise and dark current need clarification for further improvement. We studied the dark current and noise characteristics in PIN In0.53Ga0.47As photodiodes with different mesa sizes. The dark current noise exhibits a clear spectral 1/

$f$

shape in all conditions. The results at low temperatures suggest that the dark current is dominated by the sidewall shunt paths while generation-recombination dark current comes into play at high temperatures. The noise intensity follows the squared leakage current in the temperature range of 100-240 K. Since the extracted activation energy of 1/

$f$

noise approximates that of the surface leakage current, suggesting that the surface leakage current may be the primary factor of the 1/

$f$

noise.

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利用 PIN InGaAs 光电探测器中 1/f 噪声-暗电流之间的相关性

对于不断发展的光电行业来说，高性能的 InGaAs 光电探测器是众望所归。尽管生产水平已经成熟，但噪声和暗电流的根本原因仍需澄清，以便进一步改进。我们研究了不同介孔尺寸的 PIN In0.53Ga0.47As 光电二极管的暗电流和噪声特性。在所有条件下，暗电流噪声都呈现出清晰的 1/ $f$ 光谱形状。低温条件下的结果表明，暗电流主要由侧壁分流路径产生，而在高温条件下，暗电流的产生-重合起作用。由于 1/ $f$ 噪声的提取活化能接近表面泄漏电流的活化能，这表明表面泄漏电流可能是产生 1/ $f$ 噪声的主要因素。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of Quantum Electronics 工程技术-工程：电子与电气

CiteScore

4.70

自引率

4.00%

发文量

审稿时长

3.0 months

期刊介绍： The IEEE Journal of Quantum Electronics is dedicated to the publication of manuscripts reporting novel experimental or theoretical results in the broad field of the science and technology of quantum electronics. The Journal comprises original contributions, both regular papers and letters, describing significant advances in the understanding of quantum electronics phenomena or the demonstration of new devices, systems, or applications. Manuscripts reporting new developments in systems and applications must emphasize quantum electronics principles or devices. The scope of JQE encompasses the generation, propagation, detection, and application of coherent electromagnetic radiation having wavelengths below one millimeter (i.e., in the submillimeter, infrared, visible, ultraviolet, etc., regions). Whether the focus of a manuscript is a quantum-electronic device or phenomenon, the critical factor in the editorial review of a manuscript is the potential impact of the results presented on continuing research in the field or on advancing the technological base of quantum electronics.

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