Thermal flux manipulation on the silicon photonic chip to suppress the thermal crosstalk

IF 5.4 1区 物理与天体物理 Q1 OPTICS
APL Photonics Pub Date : 2024-04-08 DOI:10.1063/5.0193387
Nannan Ning, Qiang Zhang, Qikai Huang, Yuehai Wang, Bihu Lv, Kun Yin, Jianyi Yang, Hui Yu
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Abstract

The integration density of silicon photonic integrated circuit (PIC) is ultimately constrained by various crosstalk mechanisms on the chip. Among them, the most prominent limiting factor is the thermal crosstalk due to the wide use of the thermo-optic effect. High-density silicon PICs strongly demand an advanced structure with better thermal crosstalk suppression ability than the traditional air isolation trench. Inspired by the thermal-metamaterial based on the scattering-cancellation method, we demonstrate a closed heat shield (CHS) structure on a silicon PIC chip, which can manipulate the thermal flux to bypass the temperature-sensitive silicon photonics components. The on-chip CHS structure is a bilayer cylindrical shell fabricated by the standard silicon photonics processing flow. Its outer and inner shell layers are formed by a 6-μm-wide interconnection metal and 4-μm-wide air trench, respectively. Plenty of temperature-sensitive micro-ring resonators inside the CHS are used to probe the temperature profile. The measurement results show that the CHS can reduce the local temperatures by 50%/44%/36% at the locations 29/41/83 μm away from the external heater. In contrast, the conventional air trench of the same dimension reduces the local temperatures by 32%/28%/21% at the same positions. In addition, the response time of the thermal field inside the CHS is around one-half of that in the conventional air trench. Furthermore, the simulation result indicates that if the outer shell of the CHS can contact with the silicon substrate by utilizing the through-silicon-via structure, the thermal crosstalk suppression ability can be improved significantly.
在硅光子芯片上操纵热通量以抑制热串扰
硅光子集成电路(PIC)的集成密度最终受到芯片上各种串扰机制的限制。其中,最突出的限制因素是热光学效应的广泛应用所导致的热串扰。与传统的空气隔离沟槽相比,高密度硅专用集成电路强烈要求采用热串扰抑制能力更强的先进结构。受基于散射-消除方法的热超材料的启发,我们在硅 PIC 芯片上展示了一种封闭式热屏蔽(CHS)结构,它可以操纵热通量,绕过对温度敏感的硅光子元件。芯片上的 CHS 结构是一个双层圆柱形外壳,由标准硅光子加工流程制造而成。其外壳外层和内层分别由 6 微米宽的互连金属和 4 微米宽的空气沟槽构成。CHS 内部的大量温度敏感微环谐振器用于探测温度曲线。测量结果表明,在距离外部加热器 29/41/83 μm 的位置,CHS 可以将局部温度降低 50%/44%/36%。相比之下,相同尺寸的传统空气沟槽可将相同位置的局部温度降低 32%/28%/21%。此外,CHS 内部热场的响应时间约为传统空气沟槽的二分之一。此外,仿真结果表明,如果 CHS 的外壳能利用通硅-通孔结构与硅衬底接触,则热串扰抑制能力将得到显著提高。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
APL Photonics
APL Photonics Physics and Astronomy-Atomic and Molecular Physics, and Optics
CiteScore
10.30
自引率
3.60%
发文量
107
审稿时长
19 weeks
期刊介绍: APL Photonics is the new dedicated home for open access multidisciplinary research from and for the photonics community. The journal publishes fundamental and applied results that significantly advance the knowledge in photonics across physics, chemistry, biology and materials science.
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