A Memristive Oscillator (Adv. Phys. Res. 4/2024)

Yugo Oshima, Taishi Takenobu, Jiang Pu, Keisuke Ishiguro, Reizo Kato, Hiroshi M. Yamamoto, Tetsuro Kusamoto
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Abstract

Memristive Oscillation

The cover image depicts the mechanism of “memristive oscillation” unveiled in our study of the novel molecular memristor (Et-4BrT)[Ni(dmit)2]2. As revealed by Yugo Oshima and co-workers in article number 2300117, the application of current or voltage induces inductive reactance and negative differential resistance owing to the “pinched hysteresis loop” of the memristor. This emerging hybrid property, when coupled with a parallel capacitor, initiates self-oscillation—a phenomenon they term “memristive oscillation”.

Abstract Image

膜振荡器(Adv. Phys. Res.)
忆阻振荡封面图片描述了我们在研究新型分子忆阻器 (Et-4BrT)[Ni(dmit)2]2 时揭示的 "忆阻振荡 "机制。正如大岛裕吾及其合作者在文章编号 2300117 中揭示的那样,由于忆阻器的 "捏合滞后环",施加电流或电压会产生感应电抗和负微分电阻。当这种新出现的混合特性与并联电容器耦合时,就会产生自振荡--他们将这种现象称为 "忆阻器振荡"。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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