Technology review of CNTs TSV in 3D IC and 2.5D packaging: Progress and challenges from an electrical viewpoint

IF 2.6 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronic Engineering Pub Date : 2024-04-10 DOI:10.1016/j.mee.2024.112189

M.F. Abdullah, H.W. Lee

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引用次数: 0

Abstract

Through‑silicon via (TSV) is one of the most important features in 3D integrated circuit (IC) and 2.5D packaging. Both are within the advanced packaging topic for the digital and analog ICs aligned with More than Moore's paradigm. This article revisits the proposal and progress of carbon nanotubes (CNTs) TSV technology that potentially offers an improvement over the conventional Cu TSV. Today, CNTs TSV has never materialized in commercial products of 3D IC and 2.5D packaging. Compilation on notable numerical modeling works and matching them with related issues in fabrication suggest CNTs TSV technology is still in its infant stage. Although the simulation occasionally shows the advantages of CNTs TSV over Cu TSV in both digital and analog circuits, these results are prone to overestimation. One of the culprits is the number of CNT strands in the bundle which at best can be grown in the fab only $\sim 1 %$ of the theoretically compact bundle used in the RLC and RLGC models. The direction where CNTs TSV is targeting in 3D IC and 2.5D packaging is not clear by several researchers. As the requirements for high-speed digital and high-frequency analog are different, they are important to be sorted out as an essence of this review to project the path of this CNTs TSV technology.

查看原文本刊更多论文

三维集成电路和 2.5D 封装中的 CNT TSV 技术回顾：从电气角度看进展与挑战

硅通孔（TSV）是三维集成电路（IC）和 2.5D 封装中最重要的功能之一。两者都属于数字和模拟集成电路的先进封装主题，与摩尔定律相一致。本文重温了碳纳米管 (CNTs) TSV 技术的提出和进展，该技术有可能改进传统的铜 TSV。目前，碳纳米管 TSV 还未应用于 3D 集成电路和 2.5D 封装的商业产品中。对著名的数值建模工作进行汇编，并将其与制造中的相关问题进行匹配，表明 CNTs TSV 技术仍处于萌芽阶段。虽然模拟结果偶尔会显示 CNTs TSV 在数字和模拟电路中比 Cu TSV 更具优势，但这些结果容易被高估。罪魁祸首之一是管束中的 CNT 股数，在晶圆厂中最多只能生长出 RLC 和 RLGC 模型中理论上紧凑管束的 1%。对于 CNT TSV 在 3D IC 和 2.5D 封装中的应用方向，一些研究人员尚未明确。由于高速数字和高频模拟的要求不同，因此，作为本综述的精髓，对这些要求进行梳理对预测 CNTs TSV 技术的发展路径非常重要。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Microelectronic Engineering 工程技术-工程：电子与电气

CiteScore

5.30

自引率

4.30%

发文量

131

审稿时长

29 days

期刊介绍： Microelectronic Engineering is the premier nanoprocessing, and nanotechnology journal focusing on fabrication of electronic, photonic, bioelectronic, electromechanic and fluidic devices and systems, and their applications in the broad areas of electronics, photonics, energy, life sciences, and environment. It covers also the expanding interdisciplinary field of "more than Moore" and "beyond Moore" integrated nanoelectronics / photonics and micro-/nano-/bio-systems. Through its unique mixture of peer-reviewed articles, reviews, accelerated publications, short and Technical notes, and the latest research news on key developments, Microelectronic Engineering provides comprehensive coverage of this exciting, interdisciplinary and dynamic new field for researchers in academia and professionals in industry.

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