Q-Boosting Of Composite CMOS-MEMS Resonators By AC Current Low-Temperature Annealing

A. Zope, K. Bhosale, Sheng-Shian Li
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Abstract

In this work a CMOS-MEMS balanced drive and sense thermal-piezoresistive resonator’s (CMOS-MEMS TPR) quality factor (Q) is doubled by ac drive annealing at low temperature (< 250°C), which overcomes reliability failure associated with high-current density DC annealing in CMOS. The design exploits the routing flexibility in CMOS to optimize the placement of high-loss metals for efficient transduction and reduced annealing current. The system can be easily implemented as a part of existing oscillator circuits without an additional cost in standard CMOS. Commercial components were used to realize an oscillator and characterize its phase noise (-107 dBc/Hz at 1 kHz offset) and Allan Deviation (75 ppm).
通过交流电低温退火提升 CMOS-MEMS 复合谐振器的 Q 值
在这项工作中,CMOS-MEMS 平衡驱动和感应热压阻谐振器(CMOS-MEMS TPR)的品质因数(Q)在低温(< 250°C)下通过交流驱动退火提高了一倍,从而克服了 CMOS 高电流密度直流退火带来的可靠性故障。该设计利用了 CMOS 的布线灵活性,优化了高损耗金属的位置,从而实现了高效传输并降低了退火电流。该系统可作为现有振荡器电路的一部分轻松实现,无需增加标准 CMOS 的成本。我们使用商用元件实现了一个振荡器,并鉴定了其相位噪声(1 kHz 偏移时为 -107 dBc/Hz)和阿伦偏差(75 ppm)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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