{"title":"Q-Boosting Of Composite CMOS-MEMS Resonators By AC Current Low-Temperature Annealing","authors":"A. Zope, K. Bhosale, Sheng-Shian Li","doi":"10.1109/MEMS58180.2024.10439520","DOIUrl":null,"url":null,"abstract":"In this work a CMOS-MEMS balanced drive and sense thermal-piezoresistive resonator’s (CMOS-MEMS TPR) quality factor (Q) is doubled by ac drive annealing at low temperature (< 250°C), which overcomes reliability failure associated with high-current density DC annealing in CMOS. The design exploits the routing flexibility in CMOS to optimize the placement of high-loss metals for efficient transduction and reduced annealing current. The system can be easily implemented as a part of existing oscillator circuits without an additional cost in standard CMOS. Commercial components were used to realize an oscillator and characterize its phase noise (-107 dBc/Hz at 1 kHz offset) and Allan Deviation (75 ppm).","PeriodicalId":518439,"journal":{"name":"2024 IEEE 37th International Conference on Micro Electro Mechanical Systems (MEMS)","volume":"111 4","pages":"561-564"},"PeriodicalIF":0.0000,"publicationDate":"2024-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2024 IEEE 37th International Conference on Micro Electro Mechanical Systems (MEMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MEMS58180.2024.10439520","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this work a CMOS-MEMS balanced drive and sense thermal-piezoresistive resonator’s (CMOS-MEMS TPR) quality factor (Q) is doubled by ac drive annealing at low temperature (< 250°C), which overcomes reliability failure associated with high-current density DC annealing in CMOS. The design exploits the routing flexibility in CMOS to optimize the placement of high-loss metals for efficient transduction and reduced annealing current. The system can be easily implemented as a part of existing oscillator circuits without an additional cost in standard CMOS. Commercial components were used to realize an oscillator and characterize its phase noise (-107 dBc/Hz at 1 kHz offset) and Allan Deviation (75 ppm).