{"title":"Study of oscillation characteristics for quartz crystal oscillators based on equivalent multi-physics model","authors":"Zhiyu Chen, Yueyan Zhu","doi":"10.1002/adc2.192","DOIUrl":null,"url":null,"abstract":"<p>In recent years, high-performance quartz-crystal oscillators (XOs) for integrated circuits have been receiving considerable attention due to their featuring low voltage and high-frequency stability. However, recent studies tend to focus solely on the impact of temperature as a single factor on crystal oscillator circuits, overlooking the circuit structure of the crystal oscillator itself. In this paper, a novel four-parameter crystal model of XOs is detailed demonstrated, and analyzed to interpret typical XO oscillation characteristics at room temperature. The relationship between the RLC circuit and the oscillation was investigated. Meanwhile, the study delves into the various factors that influence oscillation behavior, paving the way for a comprehensive understanding of XOs' performance characteristics. temperature sweep simulations were induced to verify the theory and found that the parameter drift and thermal perturbation are close to the theory we proposed, which can be applied in temperature-compatible XOs. The significance of this study lies not only in its contribution to the design and implementation of compact footprint XOs in the oscillator circuit platform but also in its provision of experimental evidence for fabricating wide temperature range compensated XO devices. The results show that the capacitance in the equivalent model of a crystal oscillator plays a dominant role in shaping the output waveform and exhibits relatively good temperature stability characteristics and serve as a valuable resource for engineers and researchers working on improving the performance and reliability of XOs, ultimately enabling the development of more advanced and efficient integrated circuits.</p>","PeriodicalId":100030,"journal":{"name":"Advanced Control for Applications","volume":"6 4","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-02-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/adc2.192","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Control for Applications","FirstCategoryId":"1085","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/adc2.192","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In recent years, high-performance quartz-crystal oscillators (XOs) for integrated circuits have been receiving considerable attention due to their featuring low voltage and high-frequency stability. However, recent studies tend to focus solely on the impact of temperature as a single factor on crystal oscillator circuits, overlooking the circuit structure of the crystal oscillator itself. In this paper, a novel four-parameter crystal model of XOs is detailed demonstrated, and analyzed to interpret typical XO oscillation characteristics at room temperature. The relationship between the RLC circuit and the oscillation was investigated. Meanwhile, the study delves into the various factors that influence oscillation behavior, paving the way for a comprehensive understanding of XOs' performance characteristics. temperature sweep simulations were induced to verify the theory and found that the parameter drift and thermal perturbation are close to the theory we proposed, which can be applied in temperature-compatible XOs. The significance of this study lies not only in its contribution to the design and implementation of compact footprint XOs in the oscillator circuit platform but also in its provision of experimental evidence for fabricating wide temperature range compensated XO devices. The results show that the capacitance in the equivalent model of a crystal oscillator plays a dominant role in shaping the output waveform and exhibits relatively good temperature stability characteristics and serve as a valuable resource for engineers and researchers working on improving the performance and reliability of XOs, ultimately enabling the development of more advanced and efficient integrated circuits.
近年来,用于集成电路的高性能石英晶体振荡器(XO)因其低电压和高频率稳定性的特点而备受关注。然而,近期的研究往往只关注温度这一单一因素对晶体振荡器电路的影响,而忽略了晶体振荡器本身的电路结构。本文详细演示了一种新颖的四参数 XO 晶体模型,并对其进行了分析,以解释室温下的典型 XO 振荡特性。研究了 RLC 电路与振荡之间的关系。同时,研究还深入探讨了影响振荡行为的各种因素,为全面了解 XO 的性能特征铺平了道路。为了验证理论,我们进行了温度扫描仿真,发现参数漂移和热扰动与我们提出的理论非常接近,可以应用于温度兼容的 XO。这项研究的意义不仅在于它有助于在振荡电路平台中设计和实现紧凑型 XO,还在于它为制造宽温度范围补偿 XO 器件提供了实验证据。研究结果表明,晶体振荡器等效模型中的电容在形成输出波形方面起着主导作用,并表现出相对较好的温度稳定性特征,为致力于提高 XO 性能和可靠性的工程师和研究人员提供了宝贵的资源,并最终促成了更先进、更高效的集成电路的开发。