Silicon nanowires analyzed by x-ray photoelectron spectroscopy

IF 1.6 Q3 PHYSICS, CONDENSED MATTER

Surface Science Spectra Pub Date : 2024-02-28 DOI:10.1116/6.0003388

Ghulam Farid, S. Chaitoglou, R. Amade, R. Ospina, E. Bertran-Serra

引用次数: 0

Abstract

Silicon nanowires were characterized by x-ray photoelectron spectroscopy with an Al Kα (1486.6 eV) excitation source. The sample was fixed to a stainless-steel sample holder with a copper double-sided adhesive tape. Survey spectrum and C 1s, O 1s, and Si 2p core-level spectra were acquired.

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用 X 射线光电子能谱分析硅纳米线

用 Al Kα (1486.6 eV) 激发光源对硅纳米线进行了 X 射线光电子能谱分析。样品用铜质双面胶带固定在不锈钢样品架上。获得了勘测光谱以及 C 1s、O 1s 和 Si 2p 核心级光谱。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Surface Science Spectra PHYSICS, CONDENSED MATTER-

CiteScore

1.90

自引率

7.70%

发文量