{"title":"Investigation of the Electrical Parameters in a Partially Extended Ge-Source Double-Gate Tunnel Field-Effect Transistor (DG-TFET)","authors":"Omendra Kr Singh, V. Dhandapani, Baljit Kaur","doi":"10.1007/s11664-024-10997-y","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":506265,"journal":{"name":"Journal of Electronic Materials","volume":"85 23","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Electronic Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1007/s11664-024-10997-y","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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