Study on resist performance of inorganic-organic resist materials for EUV and EB lithography

Japanese Journal of Applied Physics Pub Date : 2024-03-28 DOI:10.35848/1347-4065/ad38c5

Hiroki Yamamoto, Yuko Tsutsui Ito, K. Okamoto, Shuhei Shimoda, Takahiro Kozawa

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Abstract

In this study, some hybrid inorganic-organic resist materials known as metal-oxo clusters were synthesized and their lithographic characteristics were investigated to clarify the difference in sensitivity and resolution among Ti-based, Zr-based and Hf-based oxo clusters by using EUV and EB exposure. Our results indicated that the sensitivity in Hf-based oxo clusters was higher than those of Ti-based and Zr-based oxo clusters in both EB and EUV exposure. Although the exposure dose was not optimized, the patterns of Ti-based, Zr-based, and Hf-based oxo clusters showed a 100, 50, and 32 nm line and space patterns at the dose of 250, 80, and 25 C/cm2, respectively. We clarified that it is very important for the new resist design such as hybrid inorganic-organic resist to increase photo-absorption cross section and density of elements. In particular, the size and homogeneity of particle and film quality is very important for resist performance of hybrid inorganic-organic resist materials. In addition, it is clarified that etch durability increased by annealing metal oxo clusters

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用于 EUV 和 EB 光刻技术的无机有机抗蚀剂材料的抗蚀性能研究

本研究合成了一些称为金属氧簇的无机-有机混合抗蚀剂材料，并研究了它们的光刻特性，通过使用 EUV 和 EB 曝光来阐明钛基、锆基和铪基氧簇在灵敏度和分辨率方面的差异。结果表明，在 EB 和 EUV 曝光中，Hf 基氧化物团簇的灵敏度均高于 Ti 基和 Zr 基氧化物团簇。虽然曝光剂量没有达到最佳，但在剂量为 250、80 和 25 C/cm2 时，钛基、锆基和铪基氧化物团簇的图案分别显示出 100、50 和 32 nm 的线和空间图案。我们明确指出，对于无机-有机混合抗蚀剂等新型抗蚀剂设计而言，增加光吸收截面和元素密度非常重要。特别是，颗粒的大小和均匀性以及薄膜的质量对无机-有机混合抗蚀剂材料的抗蚀性能非常重要。此外，通过对金属氧化物团簇进行退火处理，还能提高蚀刻耐久性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Japanese Journal of Applied Physics

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