DC-bias and temperature included CSWPL model for RF power transistors

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-04-01 DOI:10.1002/jnm.3229

Enduo Liu, Xiaoqiang Tang, Giovanni Crupi, Jialin Cai

引用次数: 0

Abstract

A novel frequency domain behavioral modeling method for gallium-nitride (GaN) devices is presented in this article. By utilizing a multi-dimensional polynomial function, the proposed technique interpolates DC-bias voltage and temperature based on the Canonical section-wise piecewise linear (CSWPL) model framework. A detailed description of the model's theory is provided. With data from 10-W GaN devices, the model was implemented in commercial software and validated through both DC and radio frequency (RF) tests. A robust predictive ability is demonstrated by the obtained results, thus proving the accuracy of the developed modeling method. This model is superior to the standard CSWPL model in that it is capable of predicting transistor behavior at different bias voltages and temperatures using a single set of parameters, thereby greatly reducing the complexity of the model and the time required for extraction.

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包含直流偏置和温度的 CSWPL 射频功率晶体管模型

本文介绍了一种新颖的氮化镓（GaN）器件频域行为建模方法。通过利用多维多项式函数，所提出的技术基于典型截面分片线性（CSWPL）模型框架对直流偏置电压和温度进行了内插。本文对模型理论进行了详细描述。利用 10 瓦氮化镓器件的数据，在商业软件中实现了该模型，并通过直流和射频（RF）测试进行了验证。获得的结果表明该模型具有强大的预测能力，从而证明了所开发建模方法的准确性。该模型优于标准 CSWPL 模型，因为它能够使用单组参数预测晶体管在不同偏置电压和温度下的行为，从而大大降低了模型的复杂性和提取所需的时间。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

International Journal of Numerical Modelling-Electronic Networks Devices and Fields 工程技术-工程：电子与电气

CiteScore

4.60

自引率

6.20%

发文量

101

审稿时长

>12 weeks

期刊介绍： Prediction through modelling forms the basis of engineering design. The computational power at the fingertips of the professional engineer is increasing enormously and techniques for computer simulation are changing rapidly. Engineers need models which relate to their design area and which are adaptable to new design concepts. They also need efficient and friendly ways of presenting, viewing and transmitting the data associated with their models. The International Journal of Numerical Modelling: Electronic Networks, Devices and Fields provides a communication vehicle for numerical modelling methods and data preparation methods associated with electrical and electronic circuits and fields. It concentrates on numerical modelling rather than abstract numerical mathematics. Contributions on numerical modelling will cover the entire subject of electrical and electronic engineering. They will range from electrical distribution networks to integrated circuits on VLSI design, and from static electric and magnetic fields through microwaves to optical design. They will also include the use of electrical networks as a modelling medium.