Efficiency improvement by using metal-insulator-semiconductor structure in InGaN/GaN micro-light-emitting diodes.

IF 4.1 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Frontiers of Optoelectronics Pub Date : 2024-03-28 DOI:10.1007/s12200-024-00111-9

Jian Yin, David Hwang, Hossein Zamani Siboni, Ehsanollah Fathi, Reza Chaji, Dayan Ban

{"title":"Efficiency improvement by using metal-insulator-semiconductor structure in InGaN/GaN micro-light-emitting diodes.","authors":"Jian Yin, David Hwang, Hossein Zamani Siboni, Ehsanollah Fathi, Reza Chaji, Dayan Ban","doi":"10.1007/s12200-024-00111-9","DOIUrl":null,"url":null,"abstract":"<p><p>InGaN/GaN micro-light-emitting diodes (micro-LEDs) with a metal-insulator-semiconductor (MIS) structure on the sidewall are proposed to improve efficiency. In this MIS structure, a sidewall electrode is deposited on the insulating layer-coated sidewall of the device mesa between a cathode on the bottom and an anode on the top. Electroluminescence (EL) measurements of fabricated devices with a mesa diameter of 10 μm show that the application of negative biases on the sidewall electrode can increase the device external quantum efficiency (EQE). In contrast, the application of positive biases can decrease the EQE. The band structure analysis reveals that the EQE is impacted because the application of sidewall electric fields manipulates the local surface electron density along the mesa sidewall and thus controls surface Shockley-Read-Hall (SRH) recombination. Two suggested strategies, reducing insulator layer thickness and exploring alternative materials, can be implemented to further improve the EQE of MIS micro-LEDs in future fabrication.</p>","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"17 1","pages":"8"},"PeriodicalIF":4.1000,"publicationDate":"2024-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10973746/pdf/","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Frontiers of Optoelectronics","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1007/s12200-024-00111-9","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

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Abstract

InGaN/GaN micro-light-emitting diodes (micro-LEDs) with a metal-insulator-semiconductor (MIS) structure on the sidewall are proposed to improve efficiency. In this MIS structure, a sidewall electrode is deposited on the insulating layer-coated sidewall of the device mesa between a cathode on the bottom and an anode on the top. Electroluminescence (EL) measurements of fabricated devices with a mesa diameter of 10 μm show that the application of negative biases on the sidewall electrode can increase the device external quantum efficiency (EQE). In contrast, the application of positive biases can decrease the EQE. The band structure analysis reveals that the EQE is impacted because the application of sidewall electric fields manipulates the local surface electron density along the mesa sidewall and thus controls surface Shockley-Read-Hall (SRH) recombination. Two suggested strategies, reducing insulator layer thickness and exploring alternative materials, can be implemented to further improve the EQE of MIS micro-LEDs in future fabrication.

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在 InGaN/GaN 微型发光二极管中使用金属绝缘体-半导体结构提高效率。

为了提高效率，提出了在侧壁上采用金属-绝缘体-半导体（MIS）结构的 InGaN/GaN 微型发光二极管（micro-LED）。在这种金属-绝缘体-半导体（MIS）结构中，侧壁电极沉积在底部阴极和顶部阳极之间的器件介子的绝缘层涂层侧壁上。对介子直径为 10 μm 的器件进行的电致发光（EL）测量表明，在侧壁电极上施加负偏压可提高器件的外部量子效率（EQE）。相反，施加正偏压则会降低 EQE。带状结构分析表明，影响 EQE 的原因是侧壁电场的应用操纵了沿介子侧壁的局部表面电子密度，从而控制了表面肖克利-雷德-霍尔（SRH）重组。建议采取减少绝缘层厚度和探索替代材料这两种策略，以便在未来的制造过程中进一步提高 MIS 微型 LED 的 EQE。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Frontiers of Optoelectronics ENGINEERING, ELECTRICAL & ELECTRONIC-

CiteScore

7.80

自引率

0.00%

发文量

583

期刊介绍： Frontiers of Optoelectronics seeks to provide a multidisciplinary forum for a broad mix of peer-reviewed academic papers in order to promote rapid communication and exchange between researchers in China and abroad. It introduces and reflects significant achievements being made in the field of photonics or optoelectronics. The topics include, but are not limited to, semiconductor optoelectronics, nano-photonics, information photonics, energy photonics, ultrafast photonics, biomedical photonics, nonlinear photonics, fiber optics, laser and terahertz technology and intelligent photonics. The journal publishes reviews, research articles, letters, comments, special issues and so on. Frontiers of Optoelectronics especially encourages papers from new emerging and multidisciplinary areas, papers reflecting the international trends of research and development, and on special topics reporting progress made in the field of optoelectronics. All published papers will reflect the original thoughts of researchers and practitioners on basic theories, design and new technology in optoelectronics. Frontiers of Optoelectronics is strictly peer-reviewed and only accepts original submissions in English. It is a fully OA journal and the APCs are covered by Higher Education Press and Huazhong University of Science and Technology. ● Presents the latest developments in optoelectronics and optics ● Emphasizes the latest developments of new optoelectronic materials, devices, systems and applications ● Covers industrial photonics, information photonics, biomedical photonics, energy photonics, laser and terahertz technology, and more