Optical Properties of Ferroelectric Films HfxZryO2 and La:HfxZryO2 according to Ellipsometry Data

IF 0.8 4区 物理与天体物理 Q4 OPTICS
V. N. Kruchinin, E. V. Spesivtsev, C. V. Rykhlitsky, V. A. Gritsenko, F. Mehmood, T. Mikolajick, U. Schroeder
{"title":"Optical Properties of Ferroelectric Films HfxZryO2 and La:HfxZryO2 according to Ellipsometry Data","authors":"V. N. Kruchinin, E. V. Spesivtsev, C. V. Rykhlitsky, V. A. Gritsenko, F. Mehmood, T. Mikolajick, U. Schroeder","doi":"10.1134/s0030400x23050107","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Recently ferroelectric properties have been found in hafnia-based nanosized films. Such films are of the utmost interest for development of a universal memory, which combines the advantages of random access memory and flash memory. The paper studies optical properties of hafnia-zirconium oxide films H-f<sub><i>x</i></sub>Zr<sub><i>y</i></sub>O<sub>2</sub> and lanthanum-alloyed hafnia-zirconium oxide films La:Hf<sub><i>x</i></sub>Zr<sub><i>y</i></sub>O<sub>2</sub>. Fluctuations of thickness in Hf<sub><i>x</i></sub>Zr<sub><i>y</i></sub>O<sub>2</sub> do not exceed 3.5%, fluctuations of thickness in La:Hf<sub><i>x</i></sub>Zr<sub><i>y</i></sub>O<sub>2</sub> films—3.2%. Optical properties are analyzed based on effective-medium theory. According to effective-medium theory data, Hf<sub><i>x</i></sub>Zr<sub><i>y</i></sub>O<sub>2</sub> films contain 46% HfO<sub>2</sub>, 54% ZrO<sub>2</sub>, La:Hf<sub><i>x</i></sub>Zr<sub><i>y</i></sub>O<sub>2</sub> films contain 47.5% HfO<sub>2</sub>, 52.4% ZrO<sub>2</sub>, 2.5% La<sub>2</sub>O<sub>3</sub>.</p>","PeriodicalId":723,"journal":{"name":"Optics and Spectroscopy","volume":null,"pages":null},"PeriodicalIF":0.8000,"publicationDate":"2024-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optics and Spectroscopy","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1134/s0030400x23050107","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"OPTICS","Score":null,"Total":0}
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Abstract

Recently ferroelectric properties have been found in hafnia-based nanosized films. Such films are of the utmost interest for development of a universal memory, which combines the advantages of random access memory and flash memory. The paper studies optical properties of hafnia-zirconium oxide films H-fxZryO2 and lanthanum-alloyed hafnia-zirconium oxide films La:HfxZryO2. Fluctuations of thickness in HfxZryO2 do not exceed 3.5%, fluctuations of thickness in La:HfxZryO2 films—3.2%. Optical properties are analyzed based on effective-medium theory. According to effective-medium theory data, HfxZryO2 films contain 46% HfO2, 54% ZrO2, La:HfxZryO2 films contain 47.5% HfO2, 52.4% ZrO2, 2.5% La2O3.

Abstract Image

根据椭偏仪数据得出的 HfxZryO2 和 La:HfxZryO2 铁电薄膜的光学特性
摘要 最近在基于铪的纳米薄膜中发现了铁电特性。这种薄膜对于开发兼具随机存取存储器和闪存优点的通用存储器具有极大的意义。本文研究了铪氧化锆薄膜 H-fxZryO2 和镧合金铪氧化锆薄膜 La:HfxZryO2 的光学特性。HfxZryO2 的厚度波动不超过 3.5%,La:HfxZryO2 薄膜的厚度波动为 3.2%。根据有效介质理论分析了光学特性。根据有效介质理论数据,HfxZryO2 薄膜中含有 46% 的 HfO2 和 54% 的 ZrO2,La:HfxZryO2 薄膜中含有 47.5% 的 HfO2、52.4% 的 ZrO2 和 2.5% 的 La2O3。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Optics and Spectroscopy
Optics and Spectroscopy 物理-光谱学
CiteScore
1.60
自引率
0.00%
发文量
55
审稿时长
4.5 months
期刊介绍: Optics and Spectroscopy (Optika i spektroskopiya), founded in 1956, presents original and review papers in various fields of modern optics and spectroscopy in the entire wavelength range from radio waves to X-rays. Topics covered include problems of theoretical and experimental spectroscopy of atoms, molecules, and condensed state, lasers and the interaction of laser radiation with matter, physical and geometrical optics, holography, and physical principles of optical instrument making.
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