Multiband, polarization-insensitive absorber operating in the terahertz range

IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Computational Electronics Pub Date : 2024-03-26 DOI:10.1007/s10825-024-02151-y

Ammar Armghan, Lway Faisal Abdulrazak, Muhammad Abuzar Baqir, Muhammad Saqlain, Hammad Al-Shammari

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Abstract

In this study, we analyze a thin-size metasurface-based multiband terahertz (THz) absorber with a top layer comprised of nickel-made circled plus-shaped resonators. The geometric structure of the proposed absorber consists of subwavelength size and periodically arranged nickel resonators at the top followed by substrate SiO₂ film, and the silver layer at the bottom features several high absorption bands within the 1–5-THz operating range. The proposed multiband THz absorber shows excellent absorption characteristics with perfect absorptivity, 100% at 1.5 THz, 98% at 3.2 THz, 96% at 3.72 THz, and 100% at 4.26 THz, respectively. The symmetry in the top-layer design of the unit cell shows persistence to incident waves with different polarization and makes this device independent of variation in the polarization of the waves. Besides that, surface current density analysis of the absorber illustrates that high absorption bands are achieved due to the existence of strong electric resonance in the unit cell structure. It is believed that the proposed multiband terahertz absorber with high absorption characteristics and polarization-independent behavior can be used in the field of THz shielding, THz detectors and emitters, THz sensing, and thermal imaging.

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在太赫兹范围内工作的多波段、偏振不敏感吸收器

在本研究中，我们分析了一种基于超表面的薄型多波段太赫兹（THz）吸收器，其顶层由镍制环形加形谐振器组成。该吸收器的几何结构包括顶部的亚波长尺寸和周期性排列的镍谐振器，然后是衬底二氧化硅薄膜，底部的银层具有 1-5-THz 工作范围内的多个高吸收带。所提出的多波段太赫兹吸收器具有极佳的吸收特性和完美的吸收率，在 1.5 太赫兹、3.2 太赫兹、3.72 太赫兹和 4.26 太赫兹的吸收率分别为 100%、98%、96% 和 100%。单元顶层设计的对称性显示了对不同极化入射波的持久性，使该器件不受入射波极化变化的影响。此外，对吸收器的表面电流密度分析表明，由于单元池结构中存在强电共振，因此实现了高吸收带。相信这种具有高吸收特性和偏振无关行为的多波段太赫兹吸收器可用于太赫兹屏蔽、太赫兹探测器和发射器、太赫兹传感和热成像领域。

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来源期刊

Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED

CiteScore

4.50

自引率

4.80%

发文量

142

审稿时长

>12 weeks

期刊介绍： he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.