Defects in monolayer WS2 grown via sulfurization of WSe2

IF 4.8 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Shunhui Zhang , Xiang Lan , Hang Liu , Xuyang Zhang , Baihui Zhang , Zhikang Ao , Tian Zhang , Peng Chen , Xiangdong Yang , Fangping Ouyang , Zhengwei Zhang
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引用次数: 0

Abstract

The conversion of chalcogen atoms into other types of chalcogen atoms in transition metal dichalcogenides exhibits significant advantages in tuning the bandgaps and constructing lateral heterojunctions. However, despite atomic defects at the atomic scale were inevitably formed during conversion process, the construction of dislocations remains difficult. Here, we conducted in-situ sulfurization to achieve structural transformation from monolayer WSe2 to WS2 successfully. We probe these transformations at atomic scale using high-angle annular dark field scanning transmission electron microscopy (HAADF-STEM) and study structural defects of sulfurized-WS2 by strain and displacement fields. We discovered that high-quality WSe2 flakes were completely sulfurized while dislocations were successfully constructed, manifesting atomic surface roughness and structural disorders. Our work provides insights into designing and optimizing customized Transition metal dichalcogenides (TMDs) materials in controlled synthesis and defect engineering.

通过硫化 WSe2 生长的单层 WS2 中的缺陷
在过渡金属二钙化物中,将钙源原子转化为其他类型的钙源原子在调整带隙和构建横向异质结方面具有显著优势。然而,尽管在转换过程中不可避免地会形成原子尺度的原子缺陷,但位错的构建仍然十分困难。在这里,我们进行了原位硫化,成功实现了从单层 WSe2 到 WS2 的结构转变。我们利用高角度环形暗场扫描透射电子显微镜(HAADF-STEM)在原子尺度上探测了这些转变,并通过应变和位移场研究了硫化 WS2 的结构缺陷。我们发现,高质量的 WSe2 片层在完全硫化的同时,位错也被成功构建,表现出原子表面粗糙和结构紊乱。我们的工作为在受控合成和缺陷工程中设计和优化定制的过渡金属二钙化物(TMDs)材料提供了启示。
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来源期刊
CiteScore
8.60
自引率
2.10%
发文量
2812
审稿时长
49 days
期刊介绍: Progress in Natural Science: Materials International provides scientists and engineers throughout the world with a central vehicle for the exchange and dissemination of basic theoretical studies and applied research of advanced materials. The emphasis is placed on original research, both analytical and experimental, which is of permanent interest to engineers and scientists, covering all aspects of new materials and technologies, such as, energy and environmental materials; advanced structural materials; advanced transportation materials, functional and electronic materials; nano-scale and amorphous materials; health and biological materials; materials modeling and simulation; materials characterization; and so on. The latest research achievements and innovative papers in basic theoretical studies and applied research of material science will be carefully selected and promptly reported. Thus, the aim of this Journal is to serve the global materials science and technology community with the latest research findings. As a service to readers, an international bibliography of recent publications in advanced materials is published bimonthly.
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