The GaN trench MOSFET with adaptive voltage tolerance achieved through a dual-shielding structure

IF 16.4 1区化学 Q1 CHEMISTRY, MULTIDISCIPLINARY

Accounts of Chemical Research Pub Date : 2024-03-11 DOI:10.1088/1361-6641/ad3274

Yihang Qiu, Li Wei

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Abstract

A novel GaN trench gate vertical MOSFET (PSGT-MOSFET) with a double-shield structure composed of a separated gate (SG) and a p-type shielding layer (P_shield) is proposed and investigated. The p-type shielding layer (P_shield) is positioned within the drift region, which can suppress the electric field peak at the bottom of the trench during the off state. This helps to prevent premature breakdown of the gate oxide layer. Additionally, the presence of P_shield enables the device to have adaptive voltage withstand characteristics. The separated gate (SG) can convert a portion of gate to- -drain capacitance (Cgd) into drain-to-source capacitance (Cds), significantly reducing the gate-to-drain charge of the device. This improvement in charge distribution helps enhance the switching characteristics of the device. Later, the impact of the position and length of the p-type shielding layer (P_shield) on the breakdown voltage (BV) and specific on-resistance (Ron_sp) was studied. The influence of the position and length of the separated gate (SG) on gate charge (Qgd) and breakdown voltage was also investigated. Through TCAD simulations, the parameters of P_shield and SG were optimized. Compared to conventional GaN TG-MOSFET with the same structural parameters, the gate charge was reduced by 88%. In addition, this paper also discusses the principle of adaptive voltage withstand in PSGT-MOSFET.

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通过双屏蔽结构实现自适应耐压的氮化镓沟槽 MOSFET

本文提出并研究了一种新型氮化镓沟槽栅垂直 MOSFET（PSGT-MOSFET），它具有由分离栅极（SG）和 p 型屏蔽层（P_shield）组成的双屏蔽结构。p 型屏蔽层 (P_shield) 位于漂移区内，可以抑制关断状态下沟槽底部的电场峰值。这有助于防止栅极氧化层过早击穿。此外，P_shield 的存在还能使器件具有自适应耐压特性。分离栅极 (SG) 可以将部分栅极-漏极电容 (Cgd) 转换为漏极-源极电容 (Cds)，从而显著降低器件的栅极-漏极电荷。电荷分布的改善有助于提高器件的开关特性。随后，研究了 p 型屏蔽层（P_shield）的位置和长度对击穿电压（BV）和比导通电阻（Ron_sp）的影响。此外，还研究了分离栅极（SG）的位置和长度对栅极电荷（Qgd）和击穿电压的影响。通过 TCAD 仿真，对 P_shield 和 SG 的参数进行了优化。与具有相同结构参数的传统 GaN TG-MOSFET 相比，栅极电荷减少了 88%。此外，本文还讨论了 PSGT-MOSFET 的自适应电压承受原理。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Accounts of Chemical Research 化学-化学综合

CiteScore

31.40

自引率

1.10%

发文量

312

审稿时长

2 months

期刊介绍： Accounts of Chemical Research presents short, concise and critical articles offering easy-to-read overviews of basic research and applications in all areas of chemistry and biochemistry. These short reviews focus on research from the author’s own laboratory and are designed to teach the reader about a research project. In addition, Accounts of Chemical Research publishes commentaries that give an informed opinion on a current research problem. Special Issues online are devoted to a single topic of unusual activity and significance. Accounts of Chemical Research replaces the traditional article abstract with an article "Conspectus." These entries synopsize the research affording the reader a closer look at the content and significance of an article. Through this provision of a more detailed description of the article contents, the Conspectus enhances the article's discoverability by search engines and the exposure for the research.