Analog performance and linearity analysis of a p-type group IV-IV SiGe TFET

IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Computational Electronics Pub Date : 2024-03-19 DOI:10.1007/s10825-024-02141-0

Sadhana Subhadarshini Mohanty, Pradipta Dutta, Jitendra Kumar Das, Sushanta Kumar Mohapatra, Shofiur Rahman, Reem Alanazi, Nadyah Alanazi, Abdullah N. Alodhayb

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Abstract

This work investigates a dual-material gate p-channel tunnel field-effect transistor (p-DMG-TFET) with a Si/SiGe heterojunction for achieving better performance in radio frequency (RF) applications. The results of the simulation demonstrate an improved on-current/off-current ratio (I_on/I_off ~ 10⁹) and minimum subthreshold swing (19 mV/decade) for the proposed Si_0.7Ge_0.3 hetero-TFET versus Si used as channel material. A comprehensive simulation study of both Si_0.7Ge_0.3 and Si channel devices is performed, and on the basis of their DC, analog/RF, and linearity performance, a direct comparison reveals improved results for digital and analog applications. Numerous characteristics of the proposed DMG-HJ-TFET, including I_DS, C_GS, C_GD, g_m, g_ds, f_T, TGF, TFP, GFP, and GTFP, are investigated and compared with a Si channel device, in which the proposed device shows better performance for RF circuitry applications. RF figures of merit (FOMs) including g_m2, g_m3, VIP₂, VIP₃, 1-dB compression point, IIP₃, and IMD₃ are also investigated for the proposed structure, which again demonstrates better performance.

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p 型 IV-IV 族 SiGe TFET 的模拟性能和线性度分析

这项研究探讨了一种采用硅/锗异质结的双材料栅极 p 沟道隧道场效应晶体管 (p-DMG-TFET)，以期在射频 (RF) 应用中实现更好的性能。仿真结果表明，与用作沟道材料的硅相比，拟议的 Si0.7Ge0.3 异质场效应晶体管的导通/关断电流比（Ion/Ioff ~ 109）和最小次阈值摆幅（19 mV/decade）均有所提高。对 Si0.7Ge0.3 和 Si 沟道器件进行了全面的仿真研究，在直流、模拟/射频和线性度性能的基础上，通过直接比较发现了数字和模拟应用的改进结果。研究了所提出的 DMG-HJ-TFET 的许多特性，包括 IDS、CGS、CGD、gm、gds、fT、TGF、TFP、GFP 和 GTFP，并将其与硅沟道器件进行了比较，结果表明所提出的器件在射频电路应用方面具有更好的性能。此外，还研究了拟议结构的射频性能指标（FOM），包括 gm2、gm3、VIP2、VIP3、1 分贝压缩点、IIP3 和 IMD3，结果同样显示出更佳的性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED

CiteScore

4.50

自引率

4.80%

发文量

142

审稿时长

>12 weeks

期刊介绍： he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.