T. Ito , Y. Tomioka , F. Rackerseder , M. Traub , D. Hoffmann
{"title":"Growth of β-Ga2O3 crystal with a diameter of 30 mm by laser-diode-heated floating zone (LDFZ) method","authors":"T. Ito , Y. Tomioka , F. Rackerseder , M. Traub , D. Hoffmann","doi":"10.1016/j.jcrysgro.2024.127673","DOIUrl":null,"url":null,"abstract":"<div><p>To investigate the effect of high-power laser heating on the floating zone (FZ) method, a crystal of β-Ga<sub>2</sub>O<sub>3</sub> was grown by the LDFZ method using a newly developed optical system equipped with a 20-kW laser diode (LD) system as a heat source. The growth started from a twin-free seed crystal with a diameter of 7 mm and the diameter of the crystal was increased gradually up to 30 mm. With increasing the diameter of the crystal, three patterns of the beam intensity profile were switched to heat the whole of the molten zone locally and intensively. The intensity profile of the five beamlets irradiating the sample was adjusted with a combination of the zooming by the optical system and the partial blocking by the alumina cylinder. By the proper tuning of the beam profile and the proper selection of the diameter of the feed rod, the molten zone was kept stable against gravity. The obtained crystal has a layer texture without clear facets or cracks. It almost conserves the crystallographic direction of the seed crystal but is twinned except for a twin-free region near the seed crystal.</p></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":null,"pages":null},"PeriodicalIF":1.7000,"publicationDate":"2024-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Crystal Growth","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0022024824001088","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}
引用次数: 0
Abstract
To investigate the effect of high-power laser heating on the floating zone (FZ) method, a crystal of β-Ga2O3 was grown by the LDFZ method using a newly developed optical system equipped with a 20-kW laser diode (LD) system as a heat source. The growth started from a twin-free seed crystal with a diameter of 7 mm and the diameter of the crystal was increased gradually up to 30 mm. With increasing the diameter of the crystal, three patterns of the beam intensity profile were switched to heat the whole of the molten zone locally and intensively. The intensity profile of the five beamlets irradiating the sample was adjusted with a combination of the zooming by the optical system and the partial blocking by the alumina cylinder. By the proper tuning of the beam profile and the proper selection of the diameter of the feed rod, the molten zone was kept stable against gravity. The obtained crystal has a layer texture without clear facets or cracks. It almost conserves the crystallographic direction of the seed crystal but is twinned except for a twin-free region near the seed crystal.
期刊介绍:
The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.