Filament-based memristor switching model

IF 2.6 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronic Engineering Pub Date : 2024-03-17 DOI:10.1016/j.mee.2024.112179

A.V. Fadeev, K.V. Rudenko

引用次数: 0

Abstract

The filaments rupture and recovery in oxide-type memristors have been theoretically studied. The model is based on the kinetics of oxygen vacancies and includes Joule heating of the oxide medium, which enhances the diffusion and drift of oxygen vacancies in an external electric field. The current-voltage characteristic of the model structure was obtained. Comparison with experimental results allowed for the determination of the constants used in the modeling. The peculiarity of the current-voltage characteristic observed in experimental works is explained.

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基于灯丝的忆阻器开关模型

我们从理论上研究了氧化物型忆阻器中细丝的断裂和恢复。该模型以氧空位动力学为基础，包括氧化物介质的焦耳加热，它增强了氧空位在外部电场中的扩散和漂移。研究获得了模型结构的电流-电压特性。通过与实验结果进行比较，可以确定建模中使用的常数。实验中观察到的电流-电压特性的特殊性也得到了解释。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Microelectronic Engineering 工程技术-工程：电子与电气

CiteScore

5.30

自引率

4.30%

发文量

131

审稿时长

29 days

期刊介绍： Microelectronic Engineering is the premier nanoprocessing, and nanotechnology journal focusing on fabrication of electronic, photonic, bioelectronic, electromechanic and fluidic devices and systems, and their applications in the broad areas of electronics, photonics, energy, life sciences, and environment. It covers also the expanding interdisciplinary field of "more than Moore" and "beyond Moore" integrated nanoelectronics / photonics and micro-/nano-/bio-systems. Through its unique mixture of peer-reviewed articles, reviews, accelerated publications, short and Technical notes, and the latest research news on key developments, Microelectronic Engineering provides comprehensive coverage of this exciting, interdisciplinary and dynamic new field for researchers in academia and professionals in industry.