D. A. Almaev, A. V. Almaev, V. I. Nikolaev, P. N. Butenko, M. P. Scheglov, A. V. Chikiryaka, A. I. Pechnikov
{"title":"High Sensitivity of Halide Vapor Phase Epitaxy Grown Indium Oxide Films to Ammonia","authors":"D. A. Almaev, A. V. Almaev, V. I. Nikolaev, P. N. Butenko, M. P. Scheglov, A. V. Chikiryaka, A. I. Pechnikov","doi":"10.1134/s1063782623030028","DOIUrl":null,"url":null,"abstract":"<p>The effect of H<sub>2</sub>, NH<sub>3</sub>, CO and O<sub>2</sub> on the electrically conductive properties of In<sub>2</sub>O<sub>3</sub> films grown by halide vapor phase epitaxy has been studied. In the temperature range of 200−550°C, In<sub>2</sub>O<sub>3</sub> films demonstrate gas sensitivity to all considered gases, a relatively high operation speed and repeatability of cycles. The greatest response to NH<sub>3</sub> was obtained, which exceeded 33 arb. units at a temperature of 400°C and a gas concentration of 1000 ppm<sup>−1</sup>. A qualitative mechanism of gas sensitivity of In<sub>2</sub>O<sub>3</sub> films is proposed. The obtained gas-sensitive characteristics are compared with known In<sub>2</sub>O<sub>3</sub> sensors based on various materials. It is shown that the method of halide vapor phase epitaxy makes it possible to obtain indium oxide films with high gas sensitivity.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"19 1","pages":""},"PeriodicalIF":0.6000,"publicationDate":"2024-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductors","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1134/s1063782623030028","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
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Abstract
The effect of H2, NH3, CO and O2 on the electrically conductive properties of In2O3 films grown by halide vapor phase epitaxy has been studied. In the temperature range of 200−550°C, In2O3 films demonstrate gas sensitivity to all considered gases, a relatively high operation speed and repeatability of cycles. The greatest response to NH3 was obtained, which exceeded 33 arb. units at a temperature of 400°C and a gas concentration of 1000 ppm−1. A qualitative mechanism of gas sensitivity of In2O3 films is proposed. The obtained gas-sensitive characteristics are compared with known In2O3 sensors based on various materials. It is shown that the method of halide vapor phase epitaxy makes it possible to obtain indium oxide films with high gas sensitivity.
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Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.
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