{"title":"Quantification of aluminium and silicon-containing materials using Ag Lα X-rays","authors":"Stuart R. Leadley","doi":"10.1002/sia.7301","DOIUrl":null,"url":null,"abstract":"In recent years, instrument manufacturers have been providing laboratory-based HAXPES (hard X-ray photoelectron spectroscopy) instruments that have monochromated silver Lα, chromium Kα and gallium Kα X-ray sources. To be more than a qualitative tool, two things are required: calibration of the signal intensity as a function of kinetic energy (spectrometer response function) and relative sensitivity factors. This is now possible because of routines being available to generate the spectrometer response functions for dual Al Kα/Ag Lα X-ray sources and the availability of Cant average matrix relative sensitivity factors (AMRSFs). However, to improve accuracy when using the Cant AMRSF care needs to be taken in the definition of the peak areas being used. This is because they need to include the total <i>intrinsic</i> signal that often extends beyond the main peak. This is a particular challenge when quantifying using the Al 1s peak generated with Ag Lα X-rays as some of the <i>intrinsic</i> signal overlaps with the Al KLL Auger peak. When materials include both aluminium and silicon atoms, the Si 2s and 2p peaks sit upon extended signals coming from the Al 2s and 2s peaks, respectively. Thus, quantification should be limited to using the main peak area, which necessitates different relative sensitivity factors (RSFs). Using polydimethylsiloxane (PDMS) and sapphire (Al<sub>2</sub>O<sub>3</sub>) as model systems, experimental RSFs have been determined for use with the main peaks for O 1s, Al 1s, Al2s Al 2p, Si 1s, Si 2s and Si 2p subshells normalized to the RSF of the carbon 1s main peak.","PeriodicalId":22062,"journal":{"name":"Surface and Interface Analysis","volume":"2 1","pages":""},"PeriodicalIF":1.6000,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Surface and Interface Analysis","FirstCategoryId":"92","ListUrlMain":"https://doi.org/10.1002/sia.7301","RegionNum":4,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0
Abstract
In recent years, instrument manufacturers have been providing laboratory-based HAXPES (hard X-ray photoelectron spectroscopy) instruments that have monochromated silver Lα, chromium Kα and gallium Kα X-ray sources. To be more than a qualitative tool, two things are required: calibration of the signal intensity as a function of kinetic energy (spectrometer response function) and relative sensitivity factors. This is now possible because of routines being available to generate the spectrometer response functions for dual Al Kα/Ag Lα X-ray sources and the availability of Cant average matrix relative sensitivity factors (AMRSFs). However, to improve accuracy when using the Cant AMRSF care needs to be taken in the definition of the peak areas being used. This is because they need to include the total intrinsic signal that often extends beyond the main peak. This is a particular challenge when quantifying using the Al 1s peak generated with Ag Lα X-rays as some of the intrinsic signal overlaps with the Al KLL Auger peak. When materials include both aluminium and silicon atoms, the Si 2s and 2p peaks sit upon extended signals coming from the Al 2s and 2s peaks, respectively. Thus, quantification should be limited to using the main peak area, which necessitates different relative sensitivity factors (RSFs). Using polydimethylsiloxane (PDMS) and sapphire (Al2O3) as model systems, experimental RSFs have been determined for use with the main peaks for O 1s, Al 1s, Al2s Al 2p, Si 1s, Si 2s and Si 2p subshells normalized to the RSF of the carbon 1s main peak.
期刊介绍:
Surface and Interface Analysis is devoted to the publication of papers dealing with the development and application of techniques for the characterization of surfaces, interfaces and thin films. Papers dealing with standardization and quantification are particularly welcome, and also those which deal with the application of these techniques to industrial problems. Papers dealing with the purely theoretical aspects of the technique will also be considered. Review articles will be published; prior consultation with one of the Editors is advised in these cases. Papers must clearly be of scientific value in the field and will be submitted to two independent referees. Contributions must be in English and must not have been published elsewhere, and authors must agree not to communicate the same material for publication to any other journal. Authors are invited to submit their papers for publication to John Watts (UK only), Jose Sanz (Rest of Europe), John T. Grant (all non-European countries, except Japan) or R. Shimizu (Japan only).