Three-dimensional quantum-corrected Monte Carlo device simulator of n-FinFETs

IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Computational Electronics Pub Date : 2024-03-11 DOI:10.1007/s10825-024-02145-w

C. S. Soares, G. F. Furtado, A. C. J. Rossetto, G. I. Wirth, D. Vasileska

引用次数: 0

Abstract

The effective potential approach was successfully incorporated as a quantum correction to a Monte Carlo device simulator of n-FinFETs to take into account the electron quantum confinement. The electron line density calculated by the effective potential approach agrees very well with the one calculated by a 2D Schrödinger–Poisson solver. Next, the results for the drain current as a function of the gate and drain voltage obtained by the semiclassical and by the quantum-corrected Monte Carlo device simulator were compared. The quantum-corrected Monte Carlo device simulator properly models volume inversion, which reduces the impact of surface roughness scattering, thus improving the electron drift velocity. Additionally, the quantum correction allows the modeling of the reduction of electron density in the n-FinFETs channel due to the quantum-mechanical size quantization effect. This, in turn, leads to a reduction of the drain current.

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n-FinFET 的三维量子校正蒙特卡洛器件模拟器

为了考虑电子量子约束，我们成功地将有效电势法作为量子修正纳入了 n-FinFET 蒙特卡洛器件模拟器。有效电势法计算出的电子线密度与二维薛定谔-泊松求解器计算出的电子线密度非常吻合。接下来，比较了半经典模拟器和量子校正蒙特卡洛器件模拟器得出的漏极电流与栅极和漏极电压的函数关系。量子校正蒙特卡洛器件模拟器正确地模拟了体积反转，减少了表面粗糙度散射的影响，从而提高了电子漂移速度。此外，量子修正还可以模拟由于量子力学尺寸量子化效应而导致的 n-FinFET 沟道中电子密度的降低。这反过来又导致漏极电流的降低。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED

CiteScore

4.50

自引率

4.80%

发文量

142

审稿时长

>12 weeks

期刊介绍： he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.