Effect of Yb doping on the optical and photoelectric properties of CsPbCl3 single crystals

Q2 Engineering

Optical Materials: X Pub Date : 2024-03-07 DOI:10.1016/j.omx.2024.100303

T.M. Demkiv , YaM. Chornodolskyy , T.M. Muzyka , S.Z. Malynych , R. Ya Serkiz , A.S. Pushak , A. Kotlov , R.V. Gamernyk

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Abstract

In this paper, the effect of Yb dopant on the optical and photoelectric properties of CsPbCl₃:Yb single crystals is studied. The position of the main energy level of Yb³⁺ ions relative to the energy band was determined. Two channels of electron photoionization into the conduction band were identified, which are photo-stimulated transition of valence electrons and transition of electrons from the ground level of the Yb³⁺ dopant ion. The crucial role of Yb²⁺ ions in the manifestation of the quantum cutting effect was shown. A non-uniform distribution of ytterbium dopant in the CsPbCl₃:Yb single crystal volume was revealed. It was established that the absolute quantum yield of ytterbium luminescence in CsPbCl₃:Yb single crystals in the near-infrared region at Yb concentration of 2 mol.% reaches 86%.

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掺杂镱对 CsPbCl3 单晶的光学和光电特性的影响

本文研究了掺杂 Yb 对 CsPbCl3:Yb 单晶的光学和光电特性的影响。确定了 Yb3+ 离子主能级相对于能带的位置。确定了电子光电离进入导带的两个通道，即价电子的光刺激转变和电子从 Yb3+ 掺杂离子的基态转变。结果表明，Yb2+ 离子在量子切割效应的表现中起着至关重要的作用。掺杂镱在 CsPbCl3:Yb 单晶体中的非均匀分布被揭示出来。研究证实，镱浓度为 2 摩尔% 时，CsPbCl3:Yb 单晶在近红外区域的镱发光绝对量子产率达到 86%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Optical Materials: X Engineering-Electrical and Electronic Engineering

CiteScore

3.30

自引率

0.00%

发文量

审稿时长

91 days