Emission of Parasitic X Rays of Vacuum-electron Tubes with Glass Housings: Implications for the Evaluation of Occupational Doses.

Abstract

Despite the large variety of high-voltage semiconductor components for medium and high voltage switching and pulse-forming applications as well as for high-power high-frequency generation, the use of vacuum electron tubes still prevails to a considerable degree. Due to the common design incorporating a high energy electron beam which finally is dumped into an anode or a resonator cavity, these tubes are also considered as sources of X rays produced as bremsstrahlung and characteristic radiation, which are referred to as parasitic X rays. Here three types of vacuum-electron tubes, diode, tetrode, and thyratron, with glass housings are investigated. They are predominantly operated in the high voltage range below 30 kV and are not subject to licensing laws. The measurements of the dose rate and X-ray-spectra were performed in the laboratory without complex electrical circuitry usually used in making practical measurements for occupational radiation protection. For the diode tube, where a parasitic X-ray emission is observed only in the reverse operation as a blocking diode, a broad distribution of dose rates of electrically equivalent specimens was observed. This is attributed to field emission from the electrodes. For the tetrode and the thyratron tubes, field emission from the electrodes is identified as the dominant mechanism for the generation of parasitic X rays. Thus, technical radiation protection must focus on shielding of the glass tube rather than optimization of the electrical circuitry.