Vapor-transport-deposited Sb2S3 thin-film solar cells: Tailoring photovoltaic properties through deposition temperature

Abstract

Crystal orientation plays a crucial role in the performance of Sb₂S₃ thin-film solar cells (TFSCs). Among various deposition techniques, vapor transport deposition (VTD) stands out as a viable technique for producing scalable and uniformly deposited thin films, particularly in the solar industry. This study explores temperature-modulated VTD-Sb₂S₃ deposition to enable efficient carrier transport in photovoltaic cells. In the VTD process, the deposition temperature is altered between 480 °C and 540 °C. XRD, SEM, EDS, and AFM techniques are employed to obtain the characteristics of the Sb₂S₃ thin films at varying temperatures and evaluate critical features like crystal structure and orientation, surface morphology, composition, and roughness. The prominent crystal orientation changes from the (hk0) to the (hk1) plane after increasing the deposition temperature from 500 to 520 °C. The (211)- and (221)-planes become more prominent when the deposition temperature exceeds 520 °C. The device with the architecture SLG/Mo/Sb₂S₃/CdS/i-ZnO/AZO/Al, a substrate-configured TFSC, yields a maximum power conversion efficiency of 0.22% when the VTD-Sb₂S₃ absorber film is deposited at 520 °C. This study presents a promising approach to producing thin films with a preference for specific crystal orientations. The primary aim is to enhance the efficiency of solar cells that utilize VTD-Sb₂S₃ absorbers.