Electronic structure of superconducting VN(111) films.

0 MATERIALS SCIENCE, MULTIDISCIPLINARY
Rongjing Zhai, Jiachang Bi, Shun Zheng, Wei Chen, Yu Lin, Shaozhu Xiao, Yanwei Cao
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引用次数: 0

Abstract

Vanadium nitride (VN) is a transition-metal nitride with remarkable properties that have prompted extensive experimental and theoretical investigations in recent years. However, there is a current paucity of experimental research investigating the temperature-dependent electronic structure of single-crystalline VN. In this study, high-quality VN(111) films were successfully synthesized on α -Al 2 O 3 (0001) substrates using magnetron sputtering. The crystal and electronic structures of the VN films were characterized by a combination of high-resolution X-ray diffraction, low-energy electron diffraction, resonant soft X-ray absorption spectroscopy, and ultraviolet photoelectron spectroscopy. The electrical transport measurements indicate that the superconducting critical temperature of the VN films is around 8.1 K. Intriguingly, the temperature-dependent photoelectron spectroscopy measurements demonstrate a weak temperature dependence in the electronic structure of the VN films, which is significant for understanding the ground state of VN compounds.

Abstract Image

超导 VN(111) 薄膜的电子结构。
氮化钒(VN)是一种过渡金属氮化物,具有非凡的特性,近年来引起了广泛的实验和理论研究。然而,目前有关单晶氮化钒随温度变化的电子结构的实验研究还很少。本研究利用磁控溅射技术在 α -Al 2 O 3 (0001) 基底上成功合成了高质量的 VN(111) 薄膜。研究结合高分辨率 X 射线衍射、低能电子衍射、共振软 X 射线吸收光谱和紫外光电子能谱对 VN 薄膜的晶体和电子结构进行了表征。电输运测量结果表明,VN 薄膜的超导临界温度约为 8.1 K。有趣的是,随温度变化的光电子能谱测量结果表明,VN 薄膜的电子结构具有微弱的温度依赖性,这对于理解 VN 化合物的基态具有重要意义。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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