Double channeled nanotube gate all around field effect transistor with drive current boosted

IF 2.6 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronic Engineering Pub Date : 2024-03-07 DOI:10.1016/j.mee.2024.112171

Laixiang Qin , He Tian , Chunlai Li , Yiqun Wei , Jin He , Yandong He , Tianling Ren , Zhangwei Xu , Yutao Yue

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引用次数: 0

Abstract

Gate all around field effect transistor (GAAFET) presents a resurgence ascribed to its enhanced gate electrostatic controllability by virtue of surrounding gate structure in coping with increasingly serious power consumption dissipation and short channel effects (SCE) degradation as the semiconductor technology enters into sub-10 nm technology node. Nanotube GAAFET (NT GAAFET) with inner and outer channels surrounded by inner and outer gates proves to be superior than nanowire GAAFET in drive current (I_on) augmentation and SCEs inhibition attributed to enhanced gate electrostatic integrity, holding promise to expand the Moore's law Roadmap further beyond. Herein, we demonstrate a doubled-channeled NT GAAFET (DC NT GAAFET) structure with I_on (total value) boost in comparison with NT GAAFET and NW GAAFET with the same footprint. I_on gains of 64.8% and 1.7 times have been obtained in DC NT GAAFET in compared with NT GAAFET and NW GAAFET. I_off (total value) of DC NT GAAFET degrades by 61.8% than that of NT GAAFET. Whereas SS and I_on/I_off ratio are almost comparable in DC NT GAAFET and NT GAAFET, indicating the sustained superior gate electrostatic controllability in DC NT GAAFET with respect to NT GAAFET regardless of additional channel incorporated. On the other side, both DC NT GAAFET and NT GAAFET exhibit superior device performance than NW GAAFET in terms of high operation speed and better electrostatic controllability manifested by suppressed SCEs.

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驱动电流增强型双通道纳米管栅极全周场效应晶体管

随着半导体技术进入 10 纳米以下技术节点，栅极周围场效应晶体管（GAAFET）凭借其周围栅极结构增强的栅极静电可控性，在应对日益严重的功耗耗散和短沟道效应（SCE）衰减问题上重新崛起。纳米管 GAAFET（NT GAAFET）具有内外栅极环绕的内外沟道，由于增强了栅极静电完整性，因此在提高驱动电流（I）和抑制短沟道效应（SCE）方面优于纳米线 GAAFET，有望进一步超越摩尔定律路线图。在此，我们展示了一种双通道 NT GAAFET（DC NT GAAFET）结构，与相同基底面的 NT GAAFET 和 NW GAAFET 相比，其 I（总值）得到提升。直流 NT GAAFET 的 I 增益分别是 NT GAAFET 和 NW GAAFET 的 64.8% 和 1.7 倍。DC NT GAAFET 的 I（总值）比 NT GAAFET 降低了 61.8%。而直流NT GAAFET和NT GAAFET的SS和I/I比几乎相当，这表明直流NT GAAFET的栅极静电可控性持续优于NT GAAFET，无论是否加入额外的沟道。另一方面，DC NT GAAFET 和 NT GAAFET 在高速运行和更好的静电可控性方面都比 NW GAAFET 表现出更优越的器件性能，具体表现为抑制了 SCE。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Microelectronic Engineering 工程技术-工程：电子与电气

CiteScore

5.30

自引率

4.30%

发文量

131

审稿时长

29 days

期刊介绍： Microelectronic Engineering is the premier nanoprocessing, and nanotechnology journal focusing on fabrication of electronic, photonic, bioelectronic, electromechanic and fluidic devices and systems, and their applications in the broad areas of electronics, photonics, energy, life sciences, and environment. It covers also the expanding interdisciplinary field of "more than Moore" and "beyond Moore" integrated nanoelectronics / photonics and micro-/nano-/bio-systems. Through its unique mixture of peer-reviewed articles, reviews, accelerated publications, short and Technical notes, and the latest research news on key developments, Microelectronic Engineering provides comprehensive coverage of this exciting, interdisciplinary and dynamic new field for researchers in academia and professionals in industry.