An 800MΩ-Input-Impedance 95.3dB-DR Δ-ΔΣ AFE for Dry-Electrode Wearable EEG Recording

Abstract

Non-invasive, closed-loop brain modulation offers an accessible and cost-effective means of evaluating and modulating one’s mental and physical well-being, such as Parkinson’s disease, epilepsy, and sleep disorders. However, wearable EEG systems pose significant challenges for the analog front-end (AFE) circuits in view of µV-level EEG signals of interest, multiple sources of interference, and ill-defined skin contact. This paper presents a direct-digitization AFE tailored for dry-electrode scalp EEG recording, characterized by wide input dynamic range (DR) and high input impedance. The AFE utilizes a second-order 5-bit delta-delta sigma (Δ-ΔΣ) ADC to shape DC electrode offset (DEO) and low-frequency disturbances while retaining high accuracy. A non-inverting pseudo-differential instrumentation amplifier (IA) embedded in the ADC ensures high input impedance (Z _in ) and common-mode rejection ratio (CMRR). Fabricated in a standard 0.18-μm CMOS process, the AFE delivers 700-mV _pp input signal range, 95.3-dB DR, 87-dB SNDR, and 800-MΩ input impedance at 50 Hz while consuming 88.4µW from a 1.2 V supply. The benefits of high DR and high input impedance have been validated by dry-electrode EEG measurement.