Enhanced magnetic and electrical properties of Co-doped Fe5GeTe2

IF 3.8 2区 物理与天体物理 Q2 PHYSICS, APPLIED
Junchao Zhang, Ziwen Wang, Yu Xing, Xiong Luo, Zhicheng Wang, Guopeng Wang, Aoli Shen, Haoran Ye, Shuai Dong, Linglong Li
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Abstract

The layered van der Waals material Fe5GeTe2 (F5GT) has emerged as a captivating candidate for room-temperature spintronics, boasting inherent ferromagnetic behavior. Nevertheless, the intricate magnetic characteristics of F5GT beckon a deeper exploration. Here, we present the synthesis of (Fe1−xCox)5GeTe2 (x = 0–0.47) single crystals and a comprehensive investigation of cobalt (Co) doping effects on the magnetic and transport properties. The Curie temperature (TC) enhancement of F5GT is revealed in magnetic measurements, surpassing room temperature and reaching 325 K at x = 0.24. Furthermore, Co doping induces an adjustment of the easy magnetization direction of F5GT toward the in-plane orientation, affording a significant amplification of magnetic anisotropy. Notably, for x = 0.47, an antiferromagnetic ground state emerges with a transition temperature (TN) of 340 K, accompanied by field-induced spin-flop transitions. In addition, our electrical transport measurements yield complementary insights into the influence of Co doping on F5GT, unraveling the understanding of the strong spin-charge coupling within the materials. First-principles calculations demonstrate that Co doping plays an important role in the influence of interlayer stacking and magnetic ground state. This investigation unlocks the enormous potential of Co-doped F5GT for high-performance room-temperature spintronics applications.
增强掺杂 Co 的 Fe5GeTe2 的磁性和电性
层状范德瓦耳斯材料 Fe5GeTe2(F5GT)因其固有的铁磁特性,已成为室温自旋电子学的热门候选材料。然而,F5GT 错综复杂的磁性特征还需要更深入的探索。在此,我们介绍了 (Fe1-xCox)5GeTe2 (x = 0-0.47) 单晶的合成,以及钴(Co)掺杂对磁性和传输特性影响的全面研究。磁性测量结果表明,F5GT 的居里温度 (TC) 有所提高,超过了室温,在 x = 0.24 时达到 325 K。此外,钴掺杂导致 F5GT 的易磁化方向向平面内方向调整,从而显著放大了磁各向异性。值得注意的是,当 x = 0.47 时,出现了过渡温度(TN)为 340 K 的反铁磁基态,并伴随着场诱导的自旋翻转转变。此外,我们的电输运测量结果还补充说明了掺杂 Co 对 F5GT 的影响,揭开了对材料内部强自旋电荷耦合的理解。第一性原理计算证明,掺杂钴在层间堆叠和磁基态的影响中起着重要作用。这项研究揭示了掺钴 F5GT 在高性能室温自旋电子学应用方面的巨大潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Applied Physics Letters
Applied Physics Letters 物理-物理:应用
CiteScore
6.40
自引率
10.00%
发文量
1821
审稿时长
1.6 months
期刊介绍: Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.
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