Review of Nanoscale Oxide Thin-Film Transistors for Emerging Display and Memory Applications

Weiwei Li;Di Geng;Guanhua Yang;Nianduan Lu;Ling Li
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Abstract

Oxide thin-film transistor (TFT) technology is fast and well developed since its first invention, where it is now widely used in flat panel displays. Scaling down the size of oxide TFT to the nanometer regime brings benefits such as higher density integration, faster switching speed and lower operating voltage. This miniaturization allows for very small pixel sizes, crucial for active-matrix micro light-emitting diode displays, and in particular, holographic displays. With the development of submicron manufacturing technologies for oxide TFTs, we will witness new, high-performance applications emerging. In this review paper, most of the commonly used TFT device structures at the nanoscale will be introduced, including the lateral and vertical architectures. Then, selected applications utilizing oxide nanoscale TFTs will be presented. Challenges in scaling down, including reliability, short channel effects and high contact resistance, will be presented along with possible solutions.
面向新兴显示器和存储器应用的纳米级氧化物薄膜晶体管综述
氧化物薄膜晶体管(TFT)技术自发明以来发展迅速,现已广泛应用于平板显示器。将氧化物薄膜晶体管的尺寸缩小到纳米级,可带来更高的集成密度、更快的开关速度和更低的工作电压等优势。这种微型化可实现非常小的像素尺寸,这对于有源矩阵微型发光二极管显示器,尤其是全息显示器至关重要。随着亚微米氧化物 TFT 制造技术的发展,我们将看到新的高性能应用不断涌现。本文将介绍大多数常用的纳米级 TFT 器件结构,包括横向和纵向结构。然后,将介绍利用氧化物纳米级 TFT 的选定应用。本文将介绍缩小规模所面临的挑战,包括可靠性、短沟道效应和高接触电阻,以及可能的解决方案。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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